| PART |
Description |
Maker |
| TGF2018 TGF2018-15 |
180 um Discrete GaAs pHEMT
|
TriQuint Semiconductor
|
| MRFG35010MT1 |
MRFG35010MT1 3.5 GHz, 9 W, 12 V Power FET GaAs PHEMT
Gallium Arsenide PHEMT
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| TGF2022-60 |
DC - 20 GHz Discrete power pHEMT
|
TriQuint Semiconductor,Inc.
|
| TGF2021-08 |
DC - 12 GHz Discrete power pHEMT
|
MACOM[Tyco Electronics]
|
| TGF2021-01 |
DC-12 GHz Discrete Power pHEMT
|
TRIQUINT[TriQuint Semiconductor]
|
| AS185-92 |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80%
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC-2 GHz
PHEMT GaAs IC High Linearity Positive Control SPDT Switch DC GHz
|
Alpha Industries, Inc.
Alpha Industries Inc
|
| HMC5805LS6 |
GaAs pHEMT MMIC
|
Hittite Microwave
|
| SPF-3043 |
Low Noise pHEMT GaAs FET
|
Stanford Microdevices
|
| AS211-334 |
PHEMT GaAs IC SPDT Switch DC-4 GHz
|
Skyworks Solutions Inc.
|
| AS214-92 |
PHEMT GaAs IC SPDT Switch 0.13 GHz
PHEMT GaAs IC SPDT Switch 0.1-3 GHz
PHEMT GaAs IC SPDT Switch 0.1?3 GHz
|
SKYWORKS[Skyworks Solutions Inc.]
|
