| PART |
Description |
Maker |
| BZT52C5V1 BZT52C43 |
Planar Die Construction
|
SHENZHEN YONGERJIA INDU...
|
| BZT52C6V2S BZT52C11S |
Planar Die Construction Ultra-Small Surface Mount Package
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| MMBT2369 MMBT2907 |
Epitaxial planar die construction.
Epitaxial planar die construction.
|
MAKO SEMICONDUCTOR CO.,LIMI...
MAKO SEMICONDUCTOR CO.,...
|
| SAC7.0 SAC12 |
Glass Passivated Die Construction
|
Shanghai Semitech Semic...
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| MJD117L MJD117 |
EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC(Korea)
KEC[KEC(Korea Electronics)]
|
| TIP112 |
EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
|
KEC[KEC(Korea Electronics)]
|
| GBS |
Vitreous Resistors with Corrugated Ribbon, All welded construction, High power rating up to 1000 Watt, Corrugated ribbon construction aids rapid cooling
|
Vishay
|
| 1N4007G 1N4004G 1N4001G 1N4002G 1N4002 1N4006 1N40 |
Rectifiers(整流 1 A, 1000 V, SILICON, SIGNAL DIODE
(1N4001G - 1N4007G) Rectifiers(Rugged glass package / using a high temperature alloyed construction)
IC REG VOLT 4.8V 240MA SOT-23
Rectifiers(Rugged glass package/ using a high temperature alloyed construction)
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 50 V, SILICON, SIGNAL DIODE
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 整流器（坚固的玻璃封装，采用高温合金建设
Rectifiers(Rugged glass package, using a high temperature alloyed construction) 1 A, 400 V, SILICON, SIGNAL DIODE
|
PHILIPS[Philips Semiconductors]
http://
NXP Semiconductors N.V.
|
