PART |
Description |
Maker |
TA060-180-10-10 |
6 ~ 18 GHz 10dB Gain 10dBm Low Noise Amplifier
|
Transcom, Inc.
|
PE15A1006 |
40 dB Gain, 1.1 dB NF, 15 dBm, 3.1 GHz to 3.5 GHz, Low Noise High Gain Amplifier
|
Pasternack Enterprises, Inc.
|
AT-266_1 AT-266 AT-266TR AT-2661 |
Digital Attenuator, 1-Bit, 10dB Step, DC-2.0 GHz
|
MACOM[Tyco Electronics]
|
TSDF2020W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. Vishay Siliconix
|
TA060-180-20-10 |
6 ~ 18 MHz 10dBm Low Noise Amplifier
|
Transcom, Inc.
|
TA060-120-11-10 |
6 ~ 12GHz 10dBm Low Noise Amplifier
|
Transcom, Inc.
|
CGD982LC |
1 GHz, 23 dB gain GaAs low current power doubler
|
NXP Semiconductors
|
DC1722J5010AHF |
Ultra Low Profile 0805 10dB Directional Coupler
|
Anaren Microwave
|
PB-CGB7015-SP-0000 CGB7015-BD CGB7015-SC CGB7015-S |
DC-8.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 0 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER DC-8.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier
|
Mimix Broadband, Inc. MIMIX[Mimix Broadband]
|
CGB7004-SP-0G0T CGB7004-SP-0G00 CGB7004-SC-0G0T CG |
DC-6.0 GHz InGaP HBT, MMIC or Packaged, Matched Gain Block Amplifier 0 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER DC-6.0 GHz InGaP HBT, MMIC or Packaged Matched Gain Block Amplifier
|
Mimix Broadband, Inc.
|
Q62702-F1129 BF998 |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise/ gain-controlled input stages up to 1 GHz) Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|