| PART |
Description |
Maker |
| STPSC4H065D |
650 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| STPSC10H065 STPSC10H065G-TR |
650 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| STPSC4H065D |
650 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| SW02CXC300 SW15CXC300 SW02PCN020 SW34CXC1870 SW50C |
650 A, 200 V, SILICON, RECTIFIER DIODE
650 A, 1500 V, SILICON, RECTIFIER DIODE
30 A, 200 V, SILICON, RECTIFIER DIODE
4100 A, 3400 V, SILICON, RECTIFIER DIODE
1860 A, 5000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| MBR20200CT MBR20200CT_D ON0413 |
SWITCHMODE??Power Dual Schottky Rectifier
SWITCHMODEPower Dual Schottky Rectifier 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
SWITCHMODE Power Dual Schottky Rectifier
SCHOTTKY BARRIER RECTIFIER
From old datasheet system
SWITCHMODE⑩ Power Dual Schottky Rectifier
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| DSSK28-006BS DSSK28-006B |
Silicon Schottky Diodes
From old datasheet system
Power Schottky Rectifier with common cathode 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| STD11N65M2 STP11N65M2 STU11N65M2 |
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220 package
N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh II Plus(TM) low Qg Power MOSFET in IPAK package
|
ST Microelectronics
|
| DSSK50-01A |
Power Schottky Rectifier with common cathode 25 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD
Silicon Schottky Diodes
|
IXYS, Corp.
IXYS Corporation
|
| DSSK40-006B DSSK40-004B |
Silicon Schottky Diodes
60V power schottky rectifier with common cathode
|
IXYS
|
| DSS10-006A IXYSCORP-DSS10-006A |
From old datasheet system
Power Schottky Rectifier
Silicon Schottky Diodes
|
IXYS[IXYS Corporation]
|
| DSSK30-0045A |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS[IXYS Corporation]
|
