| PART |
Description |
Maker |
| ST2305AS23RG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2302MSRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| ST2304SRG |
ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST3406SRG |
ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STP7401 STP7401S32RG |
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
STP7401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| IRF7328PBF IRF7328PBF10 IRF7328TRPBF IRF7328PBF-15 |
Trench Technology
Trench Technology Ultra Low On-Resistance
|
International Rectifier
|
| IGB15N60T |
Low Loss IGBT in Trench and Fieldstop technology 在戴低损失和场终止IGBT技
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
|
INFINEON[Infineon Technologies AG]
|
| 10-FZ122PA150SC-P990F08 10-F0122PA150SC-P990F09 |
Trench Fieldstop IGBT technology
|
Vincotech
|
| SSF6814 |
Advanced trench process technology
|
Silikron Semiconductor Co.,...
|
