PART |
Description |
Maker |
HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET SWITCHING P-CHANNEL POWER MOSFET SWITCHING N- AND P-CHANNEL POWER MOS FET 42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
RJK0368DPA-00-J0 RJK0368DPA10 |
20 A, 30 V, 0.0224 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
UPA2713GR |
SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING P-CHANNEL POWER MOSFET
|
NEC Corp. NEC[NEC]
|
UPA2702TP |
SWITCHING N- AND P-CHANNEL POWER MOS FET SWITCHING N-CHANNEL POWER MOSFET
|
NEC
|
GT15Q101 E001909 |
Silicon N-Channel IGBT for High Power Switching Application(用于大功率转换的N沟道绝缘栅双极型晶体 N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS) From old datasheet system N CHANNEL IGBT (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)
|
http:// Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
2SJ550 2SJ550L 2SJ550S |
Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor] http://
|
RJK0346DPA RJK0346DPA-00-J0 |
65 A, 30 V, 0.0027 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|