| PART |
Description |
Maker |
| W7MG1M32SVX90BNI W7MG1M32SVX70BNI W7MG1M32SVX-BN W |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
| KMM5328004CSW |
8MB X 32 DRAM Simm Using 4MB X 16
|
Samsung Semiconductor
|
| M29W640DT M29W640DT90ZA6T M29W640DB M29W640DB70N1E |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W640DB M29W640DB70N1E M29W640DB70N1F M29W640DB7 |
64 Mbit 8Mb x8 or 4Mb x16 / Boot Block 3V Supply Flash Memory
|
ST Microelectronics
|
| M29W640FT60N6E M29W640FT60N6F M29W640FT60ZA6E M29W |
64 Mbit (8Mb x8 or 4Mb x16, Page, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29DW640D70N1T M29DW640D70ZA1E M29DW640D70N6 M29DW |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| M58LW128BZA M58LW128A M58LW128A150N1E M58LW128A150 |
128 Mbit 8Mb x16 or 4Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M372V0405DT0-CFASTPAGEMODE |
4MB x 72 DRAM DIMM with ECC Using 4MB x 16 & 4MB x 4, 4KB Refresh, 3.3V Data Sheet
|
Samsung Electronic
|
| M29W640D M29DW323 M29DW324 M29DW640D70N1 M29DW640D |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
FLASH NOR HIGH DENSITY & CONSUMER
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| WEDF1M32B-905 WEDF1M32B-705 WEDF1M32B-XHX5 WEDF1M3 |
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间90ns
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间70ns
1Mx32 5V Flash Module(5VMx32闪速存储器模块(存取时间120ns
Flash MCP 闪存MCP
|
White Electronic Designs Corporation
|
| N08L163WC1CT1-55IL N08L163WC1C N08L163WC1CT1 |
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 】 16 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N08M1618L1A |
8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K x 16 bit
|
AMI SEMICONDUCTOR
|
