| PART |
Description |
Maker |
| W7G21M32SVX120BNI W7G21M32SVX90BNC W7G21M32SVX90BN |
8MB/4MB (2x1Mx32 / 1Mx32) CMOS, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
| W7MG1M32SVT90BNI |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
White Electronic Designs Corporation
|
| W7MG1M32SVX90BNI W7MG1M32SVX70BNI W7MG1M32SVX-BN W |
8MB/4MB (2x1Mx32 / 1Mx32) MirrorBitTM 3.0V, Boot Sector Flash Memory Module
|
WEDC[White Electronic Designs Corporation]
|
| M29W640GT90NA6E M29W640GT90NA6F M29W640GT90NB6E M2 |
64 Mbit (8Mb x8 or 4Mb x16, Page) 3V supply Flash memory
|
Numonyx B.V
|
| WED7FX325ZXEBSNYYC WED7F2325ZXEBSN90C WED7F2325ZXE |
2, 4, and 8MB, STmicro, 5.0V 4Mb Based, Uniform Sector FLASH Module Family
|
WEDC[White Electronic Designs Corporation]
|
| M58LW064D110ZA6 M58LW64D M58LW064D M58LW064D110N1 |
64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29DW640D70N1T M29DW640D70ZA1E M29DW640D70N6 M29DW |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| M29W640DB90N6E M29W640DT70N1T |
64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory
64 MBIT (8MB X8 OR 4MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
ST Microelectronics
|
| M29DW640D70ZA1 M29DW640D70ZA1F M29DW640D70ZA1E M29 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory 64兆位兆x8Mb的x16插槽，多行，页，引导块）3V电源快闪记忆
|
意法半导
STMicroelectronics N.V.
|
| KMM5364005BSW |
4MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4MB X 4
|
Samsung Semiconductor
|
| IBM0418A81QLAB IBM0418A41QLAB |
8Mb (512 x 18) SRAM(8M( 512x 18 ) 同步流水线式高性能CMOS静态RAM)
4Mb (256K x 18) SRAM(4M( 256Kx 18) 同步流水线式高性能CMOS静态RAM)
|
IBM Microeletronics
|
