| PART |
Description |
Maker |
| UPD166026T1K |
INTELLIGENT POWER DEVICE
|
Renesas Electronics Corporation
|
| TPD4135AK |
TOSHIBA Intelligent Power Device High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| HZIP23-P-1.27F HZIP23-P-1.27H HZIP23-P-1.27G |
Intelligent Power Device High Voltage Monolithic Silicon Power IC 智能功率器件单片硅高压功率IC
|
Toshiba Corporation
Toshiba, Corp.
|
| UPD166019T1F UPD166019T1F-E1-AY |
Single P-Channel High-Side Intelligent Power Device
|
Renesas Electronics Corporation
|
| TPD2004F EE08689 |
INTELLIGENT POWER DEVICE 2-ch SQUIB DRIVER FOR AIR BAGS
SILICON MONOLITHIC POWER MOS IC
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| MIP0124SY MIP0122SY MIP0123SY MIP0129SY MIP0125SY |
(MIP0xxxSY) Second Generation Three Terminal Package Intelligent Power Device Series
|
Panasonic
|
| IRFI644G IRFI644 IRFI644GPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=250V Rds(on)=0.28ohm Id=7.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=250V/ Rds(on)=0.28ohm/ Id=7.9A)
Power MOSFET(Vdss=250V, Rds(on)=0.28ohm, Id=7.9A) 功率MOSFET（减振钢板基本\u003d 250V，的Rds（on）\u003d 0.28ohm，身份证\u003d 7.9A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRF644N IRF644NL IRF644NS IRF644 IRF644NSTRR |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=250V, Rds(on)=240mohm, Id=14A)
Power MOSFET(Vdss=250V/ Rds(on)=240mohm/ Id=14A)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 14A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 250V五（巴西）直|4A条（丁）|63AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| TPD1028BS |
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS IC
Low-Side Switch for Motors, Solenoids, and Lamp Drivers
|
TOSHIBA[Toshiba Semiconductor]
|
| IRFP264N IRFP264NPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
|
IRF[International Rectifier]
|
