| PART |
Description |
Maker |
| MSC23V26418TD-XXBS8 MSC23V26418TD MSC23V26418TD-60 |
2M X 64 FAST PAGE DRAM MODULE, 60 ns, DMA168
From old datasheet system
2,097,152-Word x 64-Bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE
|
OKI ELECTRIC INDUSTRY CO LTD
|
| HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
|
| DP3D2X8PY5-60C DP3D16X8PY5-70C DP3ED16X8PY5-70C DP |
2M X 8 FAST PAGE DRAM MODULE, 60 ns, QMA48
16M X 8 FAST PAGE DRAM MODULE, 70 ns, QMA48
16M X 8 EDO DRAM MODULE, 70 ns, QMA48
4M X 8 EDO DRAM MODULE, 70 ns, QMA48
4M X 8 FAST PAGE DRAM MODULE, 70 ns, QMA48
8M X 8 FAST PAGE DRAM MODULE, 60 ns, QMA48
8M X 8 FAST PAGE DRAM MODULE, 70 ns, QMA48
8M X 8 FAST PAGE DRAM MODULE, 50 ns, QMA48
|
Intersil, Corp.
Twilight Technology, Inc.
|
| HYM364020GS-60 HYM364020S-60 Q67100-Q982 HYM364020 |
4M x 36-Bit Dynamic RAM Module 4M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
4M x 36 Bit FPM DRAM Module with Parity
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| Q67100-Q956 HYM362140GS-70 HYM362140GS-60 HYM36214 |
2M x 36-Bit Dynamic RAM Module 2M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
2M x 36-Bit Dynamic RAM Module 2M X 36 FAST PAGE DRAM MODULE, 70 ns, SMA72
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYM641020GS-70 HYM641020GS-60 HYM641010GS-70 HYM64 |
1M x 64 Bit DRAM Module buffered
1M x 64-Bit Dynamic RAM Module 1M X 64 FAST PAGE DRAM MODULE, 70 ns, DMA168
|
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
SIEMENS A G
|
| KMM5364003CKG KMM5364103CK KMM5364103CKG KMM536400 |
4M X 36 FAST PAGE DRAM MODULE, 50 ns, SMA72
4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V 4米36的DRAM上海药物研究所利用4Mx46M四中科院K/2K刷新V
|
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HYM532100M-80 HYM532100M-70 HYM532100MG-80 HYM5321 |
x32 EDO Page Mode DRAM Module
x32 Fast Page Mode DRAM Module X32号快速页面模式内存模
|
Avago Technologies, Ltd.
|
| MCM40200 MCM40200S10 MCM40200S80 MCM40200SG10 MCM4 |
2M x 40 Bit Dynamic Random Access Memory Module 2M X 40 FAST PAGE DRAM MODULE, 80 ns, SMA72
|
ZiLOG, Inc.
MOTOROLA[Motorola, Inc]
|
| MSC23140BL-70BS10 MSC23140BL-60DS10 |
1M X 40 FAST PAGE DRAM MODULE, 70 ns, SMA72
1M X 40 FAST PAGE DRAM MODULE, 60 ns, SMA72
|
OKI ELECTRIC INDUSTRY CO LTD
|
| HYM32V4020GDL-60 |
4M X 32 FAST PAGE DRAM MODULE, 60 ns, DMA72
|
SIEMENS A G
|
