| PART |
Description |
Maker |
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| SGW13N60UFD SGW13N60UFDTM |
Discrete, High Performance IGBT with Diode
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PSH71K |
78 A, 1200 V, N-CHANNEL IGBT
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-274AA package
|
International Rectifier
|
| FGL40N150 FGL40N150D GL40N150 FGL40N150DTU |
Copak Discrete IGBT
Electrical Characteristics of the IGBT
The FGL40N150D is designed for induction heating
|
Fairchild Semiconductor Corp
FAIRCHILD[Fairchild Semiconductor]
|
| SGW23N60UF SGW23N60UFTM |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| 1MB30-060 |
Fuji Discrete Package IGBT 48 A, 600 V, N-CHANNEL IGBT, TO-3P
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| SGL160N60UF SGL160N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| SGF23N60UF SGF23N60UFTU |
Discrete, High Performance IGBT
Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
| SGL50N60RUFD SGL50N60RUFDTU |
Discrete, Short Circuit Rated IGBT with Diode
Short Circuit Rated IGBT 80 A, 600 V, N-CHANNEL IGBT, TO-264AA
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FF900R12IE4T |
Discrete IGBT
|
Infineon Technologies AG
|
| FGL40N120AN |
Discrete IGBT
|
Fairchild Semiconductor
|
