PART |
Description |
Maker |
MTN2N70I3 |
N-Channel Enhancement Mode Power MOSF
|
Cystech Electonics Corp.
|
SY10EL34 SY10EL34LZC SY10EL34LZCTR SY10EL34ZC SY10 |
5V/3.3V ÷2,÷4,÷8 Clock Generation Chip(5V/3.3V ÷2,÷4,÷8时钟发生芯片) 5V/3.3V ÷ 2,4,8时钟发生器芯片(5V/3.3V ÷ 2,4,8时钟发生芯片 LED 2MM QUAD YELLOW 10EL SERIES, LOW SKEW CLOCK DRIVER, 3 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 5V/3.3V /2 /4 /8 CLOCK GENERATION CHIP 5V/3.3V ±2, ±4, ±8 CLOCK GENERATION CHIP 5V/3.3V 2, 4, 8 CLOCK GENERATION CHIP 5V/3.3V ÷2, ÷4, ÷8 CLOCK GENERATION CHIP
|
Micrel Semiconductor, Inc. MICREL[Micrel Semiconductor]
|
APT33GF120B2RD APT33GF120LRD |
Fast IGBT & FRED 1200V 52A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
APT30GT60AR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 40A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT30GT60CR |
The Thunderbolt IGBTis a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Thunderbolt IGBT 600V 30A
|
Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
APT6013B2FLL APT6013LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 43A 0.130 Ohm
|
Advanced Power Technology, Ltd.
|
APT6017B2FLL APT6017LFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 600V 35A 0.017 Ohm
|
Advanced Power Technology, Ltd.
|
APT20GF120BRD |
Fast IGBT & FRED 1200V 32A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBTis a new generation of high voltage power IGBTs.
|
Advanced Power Technology Ltd.
|
APT10035JLL |
POWER MOS 7 1000V 25A 0.350 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT30M30JLL |
POWER MOS 7 300V 88A 0.030 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|