| PART |
Description |
Maker |
| LTC1099 LTC1099A LTC1099AC LTC1099ACJ LTC1099ACN L |
High Speed 8-Bit A/D Converter with Built-In Sample-and-Hold 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, PDIP20
High Speed 8-Bit A/D Converter with Built-In Sample-and-Hold 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP20
High Speed 8-Bit A/D Converter with Built-In Sample-and-Hold 高位A / D，配有采样器和持
TV 6C 6#22D SKT PLUG 1-CH 8-BIT FLASH METHOD ADC, PARALLEL ACCESS, CDIP20
From old datasheet system
|
Linear Technology, Corp.
LINER[Linear Technology]
|
| TC9127AP TC9228P TC9227P |
HIGH SPEED PLL WITH BUILT-IN PRESCALER
|
TOSHIBA[Toshiba Semiconductor]
|
| BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| GPLF40T1 GP1C251 GPLF40RL |
High Speed Type Plastic Fiber Optics with Built-in Amp.
High Speed Type Plastic Fiber Optics with Built in Amp.
|
Sharp Electrionic Compo...
Sharp Corporation
SHARP[Sharp Electrionic Components]
|
| 5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
| XC6223E1219R-G XC6223E121GR-G XC6223E121MR-G XC622 |
Built-in Inrush Current Protection, 300mA High Speed LDO Voltage Regulator
|
Torex Semiconductor
|
| BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS
|
ON Semiconductor
|
| HCPL-901J HCPL-900J HCPL-9031 HCPL-902J HCPL-9030 |
SPECIAL
HCPL-0931 · High Speed Digital Isolator
HCPL-0930 · High Speed Digital Isolator
HCPL-092J · High Speed Digital Isolator
HCPL-091J · High Speed Digital Isolator
HCPL-090J · High Speed Digital Isolator
HCPL-0900 · High Speed Digital Isolator
HCPL-9000 · High Speed Digital Isolator
HCPL-9030 · High Speed Digital Isolator
HCPL-902J · High Speed Digital Isolator
HCPL-9031 · High Speed Digital Isolator
HCPL-900J · High Speed Digital Isolator
HCPL-901J · High Speed Digital Isolator
|
Agilent (Hewlett-Packard)
|
| MSM66P587TS-K MSMQ587 MSM586 MSM587 MSM66585 MSM66 |
Built-in 16 bit PWM and 8 bit A/D Converter, High-speed High-preformance 16 bit Microcontroller
|
OKI[OKI electronic componets]
|
| IXSH30N60U1 IXSH30N60AU1 |
From old datasheet system
Low VCE(sat) IGBT with Diode High Speed IGBT with Diode Combi Packs Short Circuit SOA Capability
|
IXYS[IXYS Corporation]
|
| RJK03N0DPA |
30V, 45A, 2.4m max. Built in SBD N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
