PART |
Description |
Maker |
OPB100-SZ OPB100-EZ |
Optical Emitter and Sensor Pair FIBER OPTIC LED EMITTER
|
TT electronics OPTEK Technology
|
20-1B12IPA015SC-L579F09 20-PB12IPA015SC-L579F09Y |
Open Emitter or Emitter Shunt
|
Vincotech
|
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
2SB564A |
Audio frequency power amplifier. Collector-base voltage Vcbo = -30V. Collector-emitter voltage Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation Pc(max) = 800mW. Collector current Ic = -1.0A.
|
USHA India LTD
|
2SC9011 |
Transistor. AM converter, AM/FM IF amplifier general purpose transistor. Collector-base voltage Vcbo = 60V. Collector-emitter voltage Vceo = 30V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 400mW. Collector current Ic
|
USHA India LTD
|
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W.
|
USHA India LTD
|
EMA6DXV5T5 EMA6DXV5T1 EMA6DXV5T1/D |
Dual Common Emitter Bipolar Resistor Transistor Improved Industry-Standard Single-Ended PWM Controller; Temperature Range: -40°C to 85°C; Package: 8-MSOP Dual Common Emitter Bias Resistor Transistor PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
|
ON Semiconductor http://
|
TLRA270 |
TOSHIBA LED Lamp GaAAs Red−light Emitter TOSHIBA LED Lamp GaAГAs Red-light Emitter
|
TOSHIBA[Toshiba Semiconductor]
|
FMG12 A5800479 IMD14 |
Emitter common(dual digital transistors) From old datasheet system Emitter common (dual digital transistors)
|
ROHM[Rohm]
|
STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路 IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V From old datasheet system POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC Microprocessor Supervisory Circuits
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Maxim Integrated Produc... Maxim Integrated Products, Inc. MAXIM[Maxim Integrated Products] Maixm Maxim Integrated Products Inc MAXIM - Dallas Semiconductor
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