| PART |
Description |
Maker |
| IS61LV25616-12T IS61LV25616-10LQ IS61LV25616-10LQI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 10 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K × 16高速异步的CMOS静态RAM.3V电源
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PDSO44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 12 ns, PQFP44
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 15 ns, PBGA48
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY 256K X 16 STANDARD SRAM, 7 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel 256K X 16 STANDARD SRAM, 15 ns, PDSO44
IntelliMAX Advanced Load Management Products; Package: Power 33; No of Pins: 6; Container: Tape & Reel
|
INTEGRATED SILICON SOLUTION INC
Aeroflex, Inc.
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
|
| AT29C020 AT29C020-10 AT29C020-10JC AT29C020-10JI A |
High Speed CMOS Logic Octal Inverting Transparent Latches with 3-State Outputs 20-PDIP -55 to 125
High Speed CMOS Logic Octal Positive-Edge-Triggered Inverting D-Type Flip-Flops with 3-State Outputs 20-SOIC -55 to 125 256K X 8 FLASH 5V PROM, 120 ns, PDSO32
High Speed CMOS Logic Octal Non-Inverting Buffers and Line Drivers with 3-State Outputs 20-TSSOP -55 to 125 256K X 8 FLASH 5V PROM, 100 ns, PDIP32
High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-PDIP -55 to 125 256K X 8 FLASH 5V PROM, 150 ns, PDIP32
High Speed CMOS Logic Octal Transparent Latches with 3-State Outputs 20-SOIC -55 to 125 256K X 8 FLASH 5V PROM, 150 ns, PDSO32
2-Megabit 256K x 8 5-volt Only CMOS Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| MB81C86 |
CMOS 256K-BIT HIGH-SPEED SRAM
|
Fujitsu Media Devices
|
| P4C1026-25J4C P4C1026-15CC P4C1026-15CI P4C1026-15 |
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PQCC28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC32
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PQCC28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDIP28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDIP28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 35 ns, PDSO28
ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM 256K X 4 STANDARD SRAM, 20 ns, PDSO28
|
Pyramid Semiconductor, Corp.
Pyramid Semiconductor Corporation
Pyramid Semiconductor C...
|
| HY62LF16406D |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16406E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62UF16406C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| HY62SF16404C |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
| SAB80C517-16-N-T40/85 SAB80C537-M16 SAB80C517-M-T4 |
8-BIT, MROM, 12 MHz, MICROCONTROLLER, PQFP100
High Speed CMOS Logic 4-Bit Binary Full Adder with Fast Carry 16-SOIC -55 to 125
High Speed CMOS Logic 8-Bit Universal Shift Register with 3-State Outputs 20-SOIC -55 to 125 高速CMOS逻辑83态输出通用变换缓存SOIC-20封装 工作温度55℃_125
8-Bit CMOS Single-Chip Microcontroller 8-BIT, MROM, 16 MHz, MICROCONTROLLER, PQCC84
High Speed CMOS Logic 8-Input NAND Gate 14-PDIP -55 to 125 8位CMOS单芯片微控制
8-BIT, MROM, 12 MHz, MICROCONTROLLER, PQCC84
|
Siemens Semiconductor Group
SIEMENS AG
INFINEON TECHNOLOGIES AG
SIEMENS A G
http://
|
| KM68257E KM68257E-10 KM68257E-12 KM68257E-15 KM682 |
32Kx8 bit high-speed CMOS static RAM (5V operating), 15ns
32Kx8 bit high-speed CMOS static RAM (5V operating), 10ns
32Kx8 Bit High-Speed CMOS Static RAM(5V Operating) Operated at Commercial and Industrial Temperature Ranges. 32Kx8位高速CMOS静态RAMV的工作），在商业和工业温度范围操作
32Kx8 bit high-speed CMOS static RAM (5V operating), 12ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
|
