PART |
Description |
Maker |
2SC3329 E000833 |
NPN EPITAXIAL TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HIAD AMPLIFIERS) From old datasheet system FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS AND RECOMMENDED FOR THE FIRST STAGES OF MC HEAD AMPLIFIERS
|
TOSHIBA[Toshiba Semiconductor]
|
2SC2458 2SC2458L |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Amplifier Applications Low Noise Audio Amplifier Applications TRANSISTOR (AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SA1312 E000505 |
From old datasheet system AUDIO FREQUENCY LOW NOISE AMPLIDIER APPLICATIONS TRANSISTOR (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
2SA970 |
LOW NOISE AUDIO AMPLIFIER APPLICATIONS
|
New Jersey Semi-Conductor P...
|
2SJ10807 2SJ108 |
Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
2SK880-YTE85LF 2SK880-GR |
Audio Frequency Low Noise Amplifier Applications
|
Toshiba Corporation Toshiba Semiconductor
|
2SK17007 2SK170 |
Silicon N Channel Junction Type Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
2SK370 2SK37007 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
2SK37107 2SK371 |
Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
2SA1048L |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications
|
TOSHIBA
|