| PART |
Description |
Maker |
| CPD41 |
Switching Diode High Current Switching Diode Chip
|
Central Semiconductor Corp
|
| CMPD4150 |
high current high speed switching diodeHIGH CURRENT HIGH SPEED SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| CMPD5001 CMPD5001S |
HIGH CURRENT INDUCTIVE LOAD SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| CMPD5001 CMPD5001S CMPD500110 CMPD5001-TR |
SURFACE MOUNT HIGH CURRENT INDUCTIVE LOAD SILICON SWITCHING DIODE
|
Central Semiconductor Corp.
|
| IKW50N65ES5 |
high Speed soft switching IGBT with full current rated RAPID 1 diode
|
Infineon Technologies A...
|
| KDR720S |
Schottky Barrier Diode
SCHOTTKY BARRIER TYPE DIODE(FOR HIGH SPEED SWITCHING CIRCUIT, FOR SMALL CURRENT RECTIFICATION)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
| 2SK3084 EA09398 |
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) N通道马鞍山型（高速，大电流开关，斩波调压器，DC - DC变换器和电机驱动应用
HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS
From old datasheet system
|
Toshiba, Corp.
TOSHIBA[Toshiba Semiconductor]
|
| G705SD |
The G705SD is designed for general purpose detection and high speed switching
SURFACE MOUNT, SCHOTTKY BARRIER DIODE VOLTAGE 40V, CURRENT 0.03A
|
E-Tech Electronics LTD
GTM CORPORATION
|
| LT1308 LT1308CS8 LT1308IS8 1308I LT1308AIS8 LT1308 |
High Current/ Micropower Single Cell/ 600kHz DC/DC Converters
From old datasheet system
Single Cell High Current Micropower 600kHz Boost DC/DC Converter SWITCHING REGULATOR, 750 kHz SWITCHING FREQ-MAX, PDSO8
|
Linear Technology Corporation
Linear Technology, Corp.
|
| BY329X1500 BY329X-1500S BY329X-1500 BY329X-1500S12 |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Damper diode fast, high-voltage
Damper diode fast/ high-voltage
Damper diodes fast, high-voltage - I<sub>FRM</sub>: 16 A; I<sub>O (AV)</sub>: 10 A; V<sub>RRM</sub>: 1500 V; Package: SOD113 (TO-220F); Container: Horizontal, Rail Pack
|
http://
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| KDS135 |
Switching Diode
SILICON EPITAXIAL PLANAR DIODE (HIGH VOLTAGE SWITCHING)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
