| PART |
Description |
Maker |
| BCR2AS-14A-T13B00 BCR2AS-14AB00 |
Triac Low Power Use Non-Insulated Type Planar Passivation Type
|
Renesas Electronics Corporation
|
| CR05AS |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CR3PM |
LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR3AM |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| BCR08AS-15 |
LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Renesas Electronics Corporation
|
| BCR16B BCR16C BCR16E |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| PS11011 |
Application Specific Intelligent Power Module FLAT-BASE TYPE INSULATED PACKAGE
FLAT-BASE TYPE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
POWEREX[Powerex Power Semiconductors]
|
| BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BCR10CM |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE 中功率使用非绝缘型，平面型钝
|
Mitsubishi Electric, Corp.
|
