| PART |
Description |
Maker |
| 200USP1T1A1M2RE 200USP1T1A1M6RE 200USP1T1A1M7RE 20 |
Electrical Rating: 0.4VA, 20V Max. (AC or DC)
|
E-SWITCH
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| STR-BS6301 STRS6301 STR-S6301 |
Low Leakage Diodes; Package: PG-SOT23-3; Configuration: Dual; VR (max): 80.0 V; IF (max): 200.0 mA; IR (max): 5.0 nA; trr (max): 1,500.0 ns;
SWITCHING REGULATOR HYRRTD lC
|
Sanken Electric Co.,Ltd.
|
| TA20141803DH |
SCR Thyristor; Gate Trigger Current Max, Igt:200mA; Current, It av:1800A; Package/Case:TA2; Repetitive Reverse Voltage Max, Vrrm:1400V; Current Rating:2820A RoHS Compliant: Yes
|
POWEREX INC
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| XC6383C351PL XC6383A351ML XC6383A351MR XC6383A351P |
Hall Effect IC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
LEAD FREE EXT TEMP A2982 20L SOIC
XC6383
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:50V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41; Current Rating:1A
50V 1A 1N4001 (DO-41)
|
TOREX[Torex Semiconductor]
TOREX SEMICONDUCTOR LTD.
|
| P0400NL P0401NL P0402 P0403 P0402NL |
SMT POWER INDUCTORS Toroid - Tomcat Series
SMT POWER INDUCTORS, Height: 7.6mm Max, Footprint: 18.2mm x 15.0mm Max, Current Rating: up to 14.4A
|
Pulse A Technitrol Company
|
| FAN2502 FAN2503S285 FAN2502S27 FAN2502S25 FAN2503S |
150 mA CMOS LDO Regulators
Pch Power MOSFET; ; Package: PS-8; Number Of Pins: 8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -5.6)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.03) (max 0.02); I_S (A): (max -10)
Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (Ω): (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7)
|
Fairchild Semiconductor
|
| 1120-222K-RC 1120-1R2M-RC 1120-680K-RC 1120-681K-R |
RF Choke; Series:1120; Inductance:2.2mH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:800mA; DC Resistance Max:1.54ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:1.2uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:11.4A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:68uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:4.8A; DC Resistance Max:0.053ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:680uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.6A; DC Resistance Max:0.430ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:1.8uH; Inductance Tolerance: /- 20 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:11.4A; DC Resistance Max:0.003ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:330uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.6A; DC Resistance Max:0.305ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:470uH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:1.6A; DC Resistance Max:0.355ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
RF Choke; Series:1120; Inductance:1.5mH; Inductance Tolerance: /- 10 %; Terminal Type:Radial Leaded; Core Material:Ferrite; Current Rating:800mA; DC Resistance Max:1.26ohm; Leaded Process Compatible:Yes; Body Material:Ferrite
Very high current capacity
|
BOURNS INC
Bourns Electronic Solut...
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| 2PA1774Q115 |
PNP general-purpose transistor - Complement: 2PC4617Q ; fT min: 100 MHz; hFE max: 270 ; hFE min: 120 ; I<sub>C</sub> max: 100 mA; Polarity: PNP ; Ptot max: 150 mW; VCEO max: 40 V; Package: SOT416 (SC-75); Container: Tape reel smd
|
NXP SEMICONDUCTORS
|
| 5704-RC 5705-RC 5711-RC 5717-RC 5706-RC 5707-RC 57 |
CHOKE RF HI CURR 275UH 15% RAD 1 ELEMENT, 275 uH, GENERAL PURPOSE INDUCTOR
Inductor, Toroidal 1 ELEMENT, 450 uH, GENERAL PURPOSE INDUCTOR
Inductor, Toroidal 1 ELEMENT, 50 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:5700; Inductance:500uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:4A; DC Resistance Max:0.12ohm; Leaded Process Compatible:Yes 1 ELEMENT, 500 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:5700; Inductance:25uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:9A; DC Resistance Max:0.012ohm; Leaded Process Compatible:Yes 1 ELEMENT, 25 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:5700; Inductance:75uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:5A; DC Resistance Max:0.04ohm; Leaded Process Compatible:Yes 1 ELEMENT, 75 uH, GENERAL PURPOSE INDUCTOR
Inductor, Toroidal 1 ELEMENT, 800 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:5700; Inductance:150uH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:4.75A; DC Resistance Max:0.046ohm; Leaded Process Compatible:Yes 1 ELEMENT, 150 uH, GENERAL PURPOSE INDUCTOR
Inductor, Toroidal 1 ELEMENT, 1250 uH, GENERAL PURPOSE INDUCTOR
Toroidal Inductor; Series:5700; Inductance:1.6mH; Inductance Tolerance: /- 15 %; Terminal Type:Radial Leaded; Current Rating:1.5A; DC Resistance Max:1.27ohm; Leaded Process Compatible:Yes 1 ELEMENT, 1600 uH, GENERAL PURPOSE INDUCTOR
High Current Toroid Inductors
|
Bourns, Inc.
Bourns Electronic Solutions
Bourns Electronic Solut...
|
