| PART |
Description |
Maker |
| FV120 FV133 FV150 FV166 A100 A120 A133 A150 A166 A |
Pentium processor. Max. operating frequency 120 MHz, iCOMP index 2.0 rating 100
Pentium processor. Max. operating frequency 133 MHz, iCOMP index 2.0 rating 111
Pentium processor. Max. operating frequency 150 MHz, iCOMP index 2.0 rating 114
Pentium processor. Max. operating frequency 166 MHz, iCOMP index 2.0 rating 127
Pentium processor. Max. operating frequency 100 MHz, iCOMP index 2.0 rating 90
Pentium processor. Max. operating frequency 200 MHz, iCOMP index 2.0 rating 142
|
Intel
|
| RQD-1.805 RQS RQS-93.3 RQD-1.809 RQD-1.81.8 RQD-1. |
0.25 Watt SMD Single & Dual Output
N-Channel Small Signal MOSFETs (20V…800V); Package: PG-SOT23-3; Package: SOT-23; VDS (max): 55.0 V; RDS (on) (max) (@10V): 650.0 mOhm; RDS (on) (max) (@4.5V): 825.0 mOhm; RDS (on) (max) (@2.5V): -;
0.25 Watt SMD Single & Dual Output 0.25瓦特贴片
CAP Tantalum-Wet Miniature 6V 22.0 uF /-20% Silver can Axial , TPC - Hilton 0.25瓦特贴片
|
RECOM[Recom International Power]
RECOM Power Inc.
RECOM Electronic GmbH
|
| 2SJ626 2SJ626-T1B 2SJ626-T2B |
Small Signal Diode; Repetitive Reverse Voltage Max, Vrrm:30V; Forward Voltage Max, VF:1V; Vf Test Current:5mA; Power Dissipation, Pd:80mW; Package/Case:DO-7; Current Rating:150mA; Forward Current Max, If:150mA; Forward Voltage:1.0V MOS场效应管
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC, Corp.
NEC[NEC]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| XC6383C351PL XC6383A351ML XC6383A351MR XC6383A351P |
Hall Effect IC; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes
LEAD FREE EXT TEMP A2982 20L SOIC
XC6383
Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:50V; Forward Current Avg Rectified, IF(AV):1A; Non Repetitive Forward Surge Current Max, Ifsm:30A; Forward Voltage Max, VF:1.1V; Package/Case:DO-41; Current Rating:1A
50V 1A 1N4001 (DO-41)
|
TOREX[Torex Semiconductor]
TOREX SEMICONDUCTOR LTD.
|
| FAN2502 FAN2503S285 FAN2502S27 FAN2502S25 FAN2503S |
150 mA CMOS LDO Regulators
Pch Power MOSFET; ; Package: PS-8; Number Of Pins: 8; R DS On (Ω): (max 0.09) (max 0.041) (max 0.03); I_S (A): (max -5.6)
Pch Power MOSFET; Surface Mount Type: Y; Package: SOP-8; Application Scope: mobile; R DS On (Ω): (max 0.03) (max 0.02); I_S (A): (max -10)
Pch Power MOSFET; Surface Mount Type: N; Package: VS-6; R DS On (Ω): (max 0.09) (max 0.055) (max 0.035); I_S (A): (max -5.5)
Pch Power MOSFET; Surface Mount Type: Y; Package: VS-8; Application Scope: mobile; R DS On (Ω): (max 0.3) (max 0.16) (max 0.11); I_S (A): (max -2.7)
|
Fairchild Semiconductor
|
| 1MB20-060 |
Potentiometer; Resistance Max:10kohm; Resistance Tolerance: /- 20 %; Power Rating:0.05W; Voltage Rating:50 VAC, 20VDC; Series:PTV111
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| TSMBG1005C TSMBG1006C TSMBG1007C TSMBG1009C TSMBG1 |
SINGLE BIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|110V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|145V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|185V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|200V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|210V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|215V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|250V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|265V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|300V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|350V V(BO) MAX|DO-215AA
SINGLE BIDIRECTIONAL BREAKOVER DIODE|440V V(BO) MAX|DO-215AA 单双向击穿二极管| 440V五（公报）最大|的DO - 215AA
|
ITT, Corp.
|
| IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706T |
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
IRF[International Rectifier]
|
| HS2264 HS2155 HS2153 HS2265 HS2160 HS2154 HS2261 H |
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating Cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-11
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 30; Mating/Unmating Cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-45
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating Cycles: 200; Contact Mating Area Plating: Gold; Operating Temperature Range (degrees C
Rating(Amps)(Max.): 0.5; Rated Voltage(VAC): 125; Mating/Unmating Cycles: 200; Operating Temperature Range (degrees C): -25 to 60; Generic Name: RJ-45
Peripheral IC 外围芯片
|
Thomas
|
| X4ODC24A X4ODC15A |
Input/Output Module; Input Current Max:15mA; Output Current:1A; Output Current Max:1A; Output Type:DC; Output Voltage:100V; Supply Voltage Max:30.5V; Supply Voltage Min:18V; Output Voltage Max:200V; Output Voltage Min:5V
Input/Output Module; Input Current Max:20mA; Output Current:1A; Output Current Max:1A; Output Type:DC; Output Voltage:100V; Supply Voltage Max:20V; Supply Voltage Min:10V; Output Voltage Max:200V; Output Voltage Min:5V
|
CRYDOM CORP
|
| AP6680GM |
Low On-Resistance, High Vgs Max Rating Voltage
|
Advanced Power Electronics Corp.
|
