| PART |
Description |
Maker |
| TMP93C071 E_030331_93C071_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
From old datasheet system
|
Toshiba
|
| TMP95FY64 E_030331_95FY64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP95C265 E_030331_95CS64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP93PW40D |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
| ERG51-09 |
30 A, 900 V, SILICON, RECTIFIER DIODE
|
FUJI ELECTRIC CO LTD
|
| MRFIC2006 |
900 MHz 2 STAGE PA SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
MOTOROLA[Motorola Inc]
|
| SDR9369M SDR936DM |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30放大器至9000纳秒超快速整
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
Micron Technology, Inc.
|
| APT36N90BC3G |
Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Microsemi Corporation
Microsemi, Corp.
|
| ERD51-12 RD51-09 |
9 A, 1200 V, SILICON, RECTIFIER DIODE
9 A, 900 V, SILICON, RECTIFIER DIODE
|
FUJI ELECTRIC CO LTD
|
