PART |
Description |
Maker |
MTE2050-OH1 |
CAP 10PF 100V 5% NP0(C0G) RAD.10 .15X.15 BULK 红外线发射器 5MM WATER CLEAR IR EMITTER Infrared Emitter
|
Marktech Corporate Marktech Optoelectronics
|
20-1B12IPA008SC-L239C09 20-PB12IPA008SC-L239C09Y |
Open Emitter or Emitter Shunt
|
Vincotech
|
SLT1440-H885A SLT1440-H260A SLT1446-F850A SLT1446- |
FIBER OPTIC DFB LASER MODULE EMITTER, 1368-1372nm, THROUGH HOLE MOUNT FIBER OPTIC DFB LASER MODULE EMITTER, 1408-1412nm, THROUGH HOLE MOUNT FIBER OPTIC DFB LASER MODULE EMITTER, 1508-1512nm, THROUGH HOLE MOUNT FIBER OPTIC DFB LASER MODULE EMITTER, 1607-1613nm, THROUGH HOLE MOUNT FIBER OPTIC DFB LASER MODULE EMITTER, 1568-1572nm, THROUGH HOLE MOUNT
|
|
LD271LH LD271 LD271H LD271L |
INFRARD EMITTER GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter
|
Siemens Group SIEMENS[Siemens Semiconductor Group]
|
CM150DUS-12F |
IGBT Module; Continuous Collector Current, Ic:150A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:520W; Collector Emitter Voltage, Vceo:600V 150 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
|
TCZT8020 |
Matchable Pairs - Emitter and Detector From old datasheet system Matchable Pairs ? Emitter and Detector
|
Vishay Telefunken Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
TCZT8012 |
Matchable Pairs ? Emitter and Detector From old datasheet system Matchable Pairs - Emitter and Detector
|
Vishay Telefunken Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
STC03DE170HP07 STC03DE170HP |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 } Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics STMicroelectronics
|
FMG12 A5800479 IMD14 |
Emitter common(dual digital transistors) From old datasheet system Emitter common (dual digital transistors)
|
ROHM[Rohm]
|
SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package From old datasheet system
|
Siemens Semiconductor G... SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor 50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR 晶体管|晶体管|叩| 60V的五(巴西)总裁| 3.7AI(丙)|的SOT - 324VAR 500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology] MICROSEMI POWER PRODUCTS GROUP
|