| PART |
Description |
Maker |
| MAGX-003135-120L00 MAGX-003135-120L00-15 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| TGF2955 |
40 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2953 TGF2953-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| TGF2023-20 |
100 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
| MAGX-000035-010000 MAGX-000035-01000S MAGX-000035- |
GaN on SiC HEMT Power Transistor Common-Source configuration
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solution...
M/A-COM Technology Solu...
|
| MAGX-000912-250L00 MAGX-000912-SB1PPR |
GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 960-1215 MHz, 128μs Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
| CGH40025F |
25 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGH40045 |
45 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CG2H40010 CG2H40010F CG2H40010P |
10 W, DC - 6 GHz, RF Power GaN HEMT
|
Cree, Inc
|
| MGF0843G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
