| PART |
Description |
Maker |
| 2SC5545ZS-TL-E |
UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR LEAD FREE, SC-61AA, MPAK-4
Silicon NPN Epitaxial VHF / UHF wide band amplifier
|
Renesas Electronics Corporation
|
| JDH2S01T |
UHF Band Mixer
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer
|
Toshiba Corporation
|
| MT6L61AE |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| MT6C03AS |
Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application
|
TOSHIBA
|
| BB515-T |
UHF BAND, 17.75 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
NXP SEMICONDUCTORS
|
| DO234B DO224B-3M 1M234 |
HF-UHF BAND, 22 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
HF-UHF BAND, 10 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-7
|
SEMIKRON
|
| MA27V13 |
UHF BAND, 11.71 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
|
PANASONIC CORP
|
| MA2Z377 PANASONICCORP-MA2Z377 |
20 Characters x 4 Lines, 5x7 Dot Matrix Character and Cursor UHF BAND, 3.1 pF, SILICON, VARIABLE CAPACITANCE DIODE
Silicon epitaxial planar type
|
Panasonic, Corp.
Panasonic Semiconductor
|
| BB515E6433 |
VHF-UHF BAND, 18.7 pF, SILICON, VARIABLE CAPACITANCE DIODE
|
SIEMENS A G
|
|
