| PART |
Description |
Maker |
| FDS6679_05 FDS6679 FDS667905 FDS6679NL |
30 Volt P-Channel PowerTrench MOSFET 13000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
30 Volt P-Channel PowerTrench? MOSFET
30 Volt P-Channel PowerTrench㈢ MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MSK4322U MSK4322 MSK4322D MSK4322HD MSK4322HS MSK4 |
20 AMP, 200 VOLT MOSFET SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID
|
MSK[M.S. Kennedy Corporation]
|
| SFF70N10Z SFF70N10M |
70 AMP 600 VOLT 0.030 ohm N-Channel Power MOSFET
|
SSDI[Solid States Devices, Inc]
|
| IXFK44N50F IXFX44N50F |
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die 44 A, 500 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
FILM/M CAPACITANCE=4.7 VOLT=100
HiPerRF Power MOSFETs F-Class MegaHertz Switching Single MOSFET Die
|
IXYS, Corp.
ETC[ETC]
IXYS[IXYS Corporation]
|
| IRF6678TR1 |
Leaded A 30V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MX package rated at 150 amperes.
|
International Rectifier
|
| MRF9060 MRF9060R1 MRF9060S MRF9060SR1 |
4 MEGABIT 3.3 VOLT SERIAL CONFIGURATION UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor
945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
|
飞思卡尔半导体(中国)有限公司
Motorola, Inc.
Advanced Semiconductor
MOTOROLA[Motorola, Inc]
|
| AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏，只有闪存
|
Atmel Corp.
Atmel, Corp.
|
| AT49BV2048 |
2-Megabit 3-volt Only Flash Memory(2M浣?3V???瀛???ī
2M bit. 2.7-Volt Read and 2.7-Volt Write. Byte-Write Flash. Bottom Boot
|
Atmel Corp.
|
| FDS6679 FDS6679NL |
30 Volt P-Channel PowerTrench MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| GE28F320W30B70 GE28F320W30B85 RD28F6408W30T85 28F6 |
Segmented Alphanumeric LED; Display Technology:LED; No. of Digits/Alpha:1; Body Material:GaAsP; LED Color:Red; Leaded Process Compatible:Yes; Luminous Intensity:7.5mcd RoHS Compliant: Yes 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 2M X 16 FLASH 1.8V PROM, PBGA56
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) SPECIALTY MEMORY CIRCUIT, PBGA80
1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30) 1.8伏英特尔无线闪存伏的I / O和SRAM（宽30
|
Intel, Corp.
Intel Corp.
|
| FDZ208P |
P-Channel 30 Volt PowerTrench BGA MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
