| PART |
Description |
Maker |
| SFT5004/59 SFT5002/59 SFT5004JDB |
10 AMP 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-59
10 AMP 150 VOLTS NPN HIGH SPEED POWER TRANSISTOR 10 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-257AA
|
Solid States Devices, Inc.
Solid State Devices, Inc.
|
| 61084-300 61084 61084-001 61084-002 61084-101 6108 |
TV 29C 29#20 PIN PLUG 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
TV 42C 36#22D 6#8(TWINAX) SKT 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR
|
Micropac Industries, Inc.
MICROPAC[Micropac Industries]
|
| 61090-300 61090 61090-001 61090-002 61090-101 6109 |
SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
TV 11C 11#12 SKT PLUG 150 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Micropac Industries, Inc.
MICROPAC[Micropac Industries]
|
| MG50Q2YS9 MG100M2CK1 MG200H2CK1 GT60M103 MG400H1FK |
50 A, 1200 V, N-CHANNEL IGBT
100 A, 880 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
200 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
150 A, 550 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
400 A, 600 V, N-CHANNEL IGBT
|
|
| MDS150 |
150 Watts, 50 Volts, Pulsed Avionics 1030 - 1090 MHz
MODE-S, 1030/1090 MHz, Class C, Common Base, Pulsed ; P(out) (W): 150; P(in) (W): 20; Gain (dB): 10; Vcc (V): 50; Pulse Width (µsec): 128; Duty Cycle (%): 2; Case Style: 55AW-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi Corporation
Microsemi, Corp.
|
| CFD2374 CFD2374Q CFB1548 CFB1548A CFB1548AP CFB154 |
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548Q
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFD2374A
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374AP
2.000W Power PNP Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFD2374AQ
2.000W Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFD2374P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 250 hFE. Complementary CFB1548A
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548AP
2.000W Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 120 - 250 hFE. Complementary CFB1548P
2.000W Power NPN Plastic Leaded Transistor. 80V Vceo, 3.000A Ic, 70 - 150 hFE. Complementary CFB1548AQ
|
Continental Device India Limited
|
| IRF230-233 IRF231 IRF232 IRF233 MTP12N18 MTP12N20 |
N-Channel Power MOSFETs, 12A, 150-200 V 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Power MOSFETs, 12A, 150-200 V N沟道功率MOSFET，第12A50-200 V
(MTP12N18 / MTP12N20) N-Channel Power MOSFETs
N-Channel Power MOSFETs/ 12A/ 150-200 V
N-Channel Power MOSFETs 12A 150-200 V
|
http://
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MTW26N15E ON2689 |
TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHM 26 A, 150 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE
From old datasheet system
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
|
| 2SC2631 2SA1123 |
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) 50 mA, 150 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
http://
|
| 2SC2712L-X-AL3-R 2SC2712G-X-AL3-R 2SC2712-X-AL3-R |
AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
http://
Unisonic Technologies Co., Ltd.
UNISONIC TECHNOLOGIES CO LTD
|
| MMBT945-H MMBT945-L MMBT945-H-TP |
NPN Silicon Plastic-Encapsulate Transistor
150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components
|
|
