| PART |
Description |
Maker |
| L2SD1781KQLT3G L2SD1781KQLT1G L2SD1781KQLT1G11 L2S |
Medium Power Transistor (32V, 0.8A) High current capacity in compact
|
Leshan Radio Company
|
| 2SA1416 |
Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity
|
TY Semiconductor Co., Ltd
|
| AEP15024 AEP15112 AEP15124 AEP15312 AEP15324 AEP16 |
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact..
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: a contact..
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 1 form A. Contact rating: 60A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Without indicator contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 12 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
EP-relay. High voltage and current, out-off capacity in a compact package. Nominal voltage 24 V DC. Contact arrangement: 2 form A. Contact rating: 150A. Indicator contact arrangement: b contact.
|
Matsushita Electric Works(Nais)
|
| LT3741 LT3763 LT3791 |
60V High Current Step-Down LED Driver Controller Accurately Control Input and Output Current
|
Linear Technology
|
| EN3096A 2SC4489T-AN |
Bipolar Transistor
Bipolar Transistor High breakdown voltage, large current capacity
|
ON Semiconductor
|
| RT6010 |
Dual Channel High Efficiency and High Accuracy Average Current Control LED Backlight Buck Controller
|
Richtek Technology Corporation
|
| 2SC4306 |
Low saturation voltage. Fast switching speed. Large current capacity.
|
TY Semiconductor Co., Ltd
|
| M3062AFCVGP M30626FHPFP M30626FHPGP M30627FHPGP M3 |
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K 4K bytes, RAM capacity = 20K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 96K bytes, RAM capacity = 5K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K bytes, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K 4K bytes, RAM capacity = 10K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 64K 4K bytes, RAM capacity = 4K bytes,
Single-chip 16-bit CMOS microcomputer, RAM capacity = 4K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 512K 4K bytes, RAM capacity = 31K bytes,
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 384K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 31K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 24K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 320K bytes, RAM capacity = 16K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 128K bytes, RAM capacity = 10K bytes
Single-chip 16-bit CMOS microcomputer, ROM capacity = 256K bytes, RAM capacity = 20K bytes
|
Renesas
|
| CY7C1380BV25-150BGC CY7C1382BV25-133BGC CY7C1382BV |
512K x 36 / 1 Mb x 18 Pipelined SRAM
FUSE, FAST ACTING, 250MA; Current, fuse rating:250mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
FUSE, FAST ACTING, 5A; Current, fuse rating:5A; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, UL; Current, breaking capacity AC:50A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse type, blowing RoHS Compliant: Yes
FUSE, TIME DELAY, 100MA; Current, fuse rating:100mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
FUSE, FAST ACTING, 500MA; Current, fuse rating:500mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
FUSE, FAST ACTING, 2A; Current, fuse rating:2A; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse type, RoHS Compliant: Yes
|
Cypress Semiconductor Corp.
|
| SW3002A SW3001A SW3008A SW3003A SW3833D |
High Capacity Rockers
|
Nihon Kaiheiki Industry Co. Ltd.
Nihon Kaiheiki Industry...
|
| TS19601CP5RO |
700mA High Voltage Adjustable Current Regulator With Enable Control
|
Taiwan Semiconductor Company, Ltd
|
|
