| PART |
Description |
Maker |
| IRFIZ48G IRFIZ48 IRFIZ48GPBF |
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=39A)
Power MOSFET(Vdss=60V, Rds(on)=0.018ohm, Id=37A) 功率MOSFET（减振钢板基本\u003d 60V的，的Rdson）\u003d 0.018ohm，身份证\u003d 37A条）
Power MOSFET(Vdss=60V Rds(on)=0.018ohm Id=37A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRFP064V |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=5.5mohm, Id=130A?
|
Power MOSFET
International Rectifier
|
| IRFP044 |
60V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=60V, Rds(on)=0.028ohm, Id=57A)
|
International Rectifier
Power MOSFET
|
| IRFR9014 IRFU9014 IRFR9014TRL |
HEXFET Power MOSFET HEXFET功率MOSFET
-60V Single P-Channel HEXFET Power MOSFET in a D-Pak package
-60V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-60V Rds(on)=0.50ohm Id=-5.1A)
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-5.1A) 功率MOSFET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 5.1A
|
IRF[International Rectifier]
Samsung semiconductor
International Rectifier, Corp.
|
| IRHLF740Z4 IRHLF770Z4 IRHLF780Z4 IRHLF730Z4 IRHLF6 |
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) 抗辐射逻辑电平功率MOSFET通孔（到39
From old datasheet system
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-39 package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF1010E IRF1010EPBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A 功率MOSFET（减振钢板基本\u003d 60V的，的Rds（on）\u003d 12mohm，身份证\u003d 84A条?
Power MOSFET(Vdss=60V/Rds(on)=12mohm/Id=84A
|
International Rectifier, Corp.
|
| IRHM7054 JANSR2N7431 JANSR2N7394 JANSF2N7394 IRHM8 |
60V 600kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
60V 300kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| FDP20AN06A0 FDB20AN06A0 FDB20AN06A0NL FDP20AN06A0N |
60V N-Channel PowerTrench MOSFET 60V, 45A 20mohm 45 A, 60 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench MOSFET 60V, 45A, 20m
N-Channel PowerTrench MOSFET 60V, 45A, 20 milliohm
N-Channel PowerTrench?? MOSFET 60V, 45A, 20m???
From old datasheet system
N-Channel PowerTrench㈢ MOSFET 60V, 45A, 20mз
N-Channel PowerTrench? MOSFET 60V, 45A, 20m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| IRFSL7534 IRFB7534 IRFB7534PBF |
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
60V Single N-Channel HEXFET Power MOSFET in a TO-220 package
|
International Rectifier
|
| FDS5351 |
60V N-Channel PowerTrench MOSFET; Package: SO-8; No of Pins: 8; Container: Tape & Reel 6.1 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel PowerTrench㈢ MOSFET 60V, 6.1A, 35mヘ
N-Channel PowerTrench? MOSFET 60V, 6.1A, 35mΩ
|
Fairchild Semiconductor, Corp.
|
