| PART |
Description |
Maker |
| STGW40V60DLF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
| CM75TU-12F |
Trench Gate Design Six IGBTMOD?/a> 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD⑩ 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD 75 Amperes/600 Volts
Trench Gate Design Six IGBTMOD75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| SMBJ26A SMBJ7.5 SMBJ28 SMBJ8.5 SMBJ24C SMBJ22C SMB |
Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt
High Speed CMOS Logic Dual Retriggerable Monostable Multivibrators with Resets 16-CDIP -55 to 125
CMOS Strobed Hex Inverter/Buffer with 3-State Outputs 16-SO -55 to 125
High Speed CMOS Logic Octal Inverting Transparent Latch with 3-State Outputs 20-CDIP -55 to 125
High Speed CMOS Logic Analog Multiplexers/Demultiplexers 16-CDIP -55 to 125
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-CDIP -55 to 125
High Speed CMOS Logic Dual Binary Up-Counter 16-CDIP -55 to 125
CMOS Dual Binary Up-Counter 16-CDIP -55 to 125
Replaced by VFC320 : Synchronized Voltage-To-Frequency Converter 16-CDIP
12-bit, 25 MSPS 1-Channel AFE for CCD Sensors with Fixed TG 96-BGA MICROSTAR JUNIOR
Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Transient Voltage Suppressor 5.0 to 170 Volts 600 Watt 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
CMOS Presettable BCD Up/Down Counter 16-TSSOP -55 to 125 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
Octal D-Type Flip-Flops with 3-State Outputs 20-CDIP -55 to 125
|
Micro Commercial Compon...
http://
Micro Commercial Components Corp.
Micro Commercial Components, Corp.
|
| APT150GN60JDQ4 |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: ISOTOP®; BV(CES) (V): 600; VCE(sat) (V): 1.4; IC (A): 123; 220 A, 600 V, N-CHANNEL IGBT
|
Microsemi, Corp.
Advanced Power Technology
|
| CM100TJ-12F |
128 x 64 pixel format, LED or EL Backlight available 100 A, 600 V, N-CHANNEL IGBT
Trench Gate Design 100 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| IGW20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| MBQ60T65PES |
High Speed Fieldstop Trench IGBT Second Generation
|
MagnaChip Semiconductor...
|
| IKW20N60H3 |
High speed DuoPack : IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| RJP60F0DPM RJP60F0DPM-15 |
600 V - 25 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK6018DPK11 |
600 V - 30 A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW20H65FB |
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
|
ST Microelectronics
|
