| PART |
Description |
Maker |
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| BSS138PW |
60 V, 320 mA N-channel Trench MOSFET
60 V, 360 mA N-channel Trench MOSFET
|
NXP Semiconductors
|
| NX2301P |
20 V, 2 A P-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., L...
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| 2N7002PV |
60 V, 350 mA N-channel Trench MOSFET
60 V, 350 mA dual N-channel Trench MOSFET
|
NXP Semiconductors
|
| FDT86244 |
150V N-Channel Power TrenchMOSFET
N-Channel Power Trench MOSFET
N-Channel Power Trench MOSFET
|
Fairchild Semiconductor
|
| PMV32UP |
20 V, 4 A P-channel Trench MOSFET
|
NXP Semiconductors
|
| BUK6D81-80E |
80 V, N-channel Trench MOSFET
|
Nexperia
|
| PMV30XN |
20 V, 3.2 A N-channel Trench MOSFET
|
ZP Semiconductor
|
| PMN25UN |
6A N-channel Trench MOSFET
|
NXP Semiconductors
|
| PMN35EN |
30 V, 5.1 A N-channel Trench MOSFET
|
NXP Semiconductors
|
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