| PART |
Description |
Maker |
| MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL
ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119
4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc
Motorola Mobility Holdings, Inc.
|
| GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209
36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
| GS8170LW36C-333 GS8170LW36C-250 GS8170LW36C-250I G |
333MHz 512K x 36 18MB double late write sigmaRAM SRAM
250MHz 512K x 36 18MB double late write sigmaRAM SRAM
300MHz 512K x 36 18MB double late write sigmaRAM SRAM
333MHz 256K x 72 18MB double late write sigmaRAM SRAM
250MHz 256K x 72 18MB double late write sigmaRAM SRAM
300MHz 1M x 18 18MB double late write sigmaRAM SRAM
|
GSI Technology
|
| MCM63R836A |
8M Late Write HSTL
|
Motorola, Inc
|
| MCM69L818AZP9.5R MCM69L736A MCM69L736AZP10.5 MCM69 |
4M Late Write HSTL
|
MOTOROLA[Motorola, Inc]
|
| K7Z167285A |
256Kx72 Double Late Write SigmaRAMData Sheet
|
Samsung Electronic
|
| GS8170DW36AC-250 GS8170DW36AC-333 GS8170DW36AGC-25 |
18Mb ヒ1x1Dp CMOS I/O Double Late Write SigmaRAM
|
GSI[GSI Technology]
|
| MCM63R918 MCM63R836 |
8MBit Synchronous Late Write Fast Static RAM(8M位同步迟写快速静态RAM)
|
Motorola, Inc.
|
| HM64YGB36100BP-33 HM64YGB36100 |
32M Synchronous Late Write Fast Static RAM (1-Mword 】 36-bit)
|
Renesas Electronics Corporation
|
| HM64YGB36100 HM64YGB36100BP-33 |
32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)
|
Renesas Electronics Corporation
|
| HM64YLB36512BP-33 HM64YLB36512 HM64YLB36512BP-28 |
16M Synchronous Late Write Fast Static RAM (512-kword 隆驴 36-bit)
16M Synchronous Late Write Fast Static RAM (512-kword × 36-bit)
|
Renesas Electronics Corporation
|
