| PART |
Description |
Maker |
| GM71V17803CI-7 |
2M X 8 EDO DRAM, 70 ns, PDSO28
|
|
| MSM5117805F-50TS-K |
2M X 8 EDO DRAM, 50 ns, PDSO28
|
LAPIS SEMICONDUCTOR CO LTD
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HYB3165805ATL-60 HYB3165805ATL-50 HYB3165805ATL-40 |
4M x 16 Bit 4k EDO DRAM Low Power
8M x 8 Bit 4k EDO DRAM
8M x 8 Bit 8k EDO DRAM
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MT4C2M8E7DJ-7STR |
2M X 8 EDO DRAM, 70 ns, PDSO28 0.300 INCH, PLASTIC, SOJ-28
|
Alliance Semiconductor, Corp.
|
| AS4LC2M8E0-70JC |
2M X 8 EDO DRAM, 70 ns, PDSO28 0.400 INCH, PLASTIC, SOJ-28
|
Alliance Semiconductor, Corp.
|
| Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY |
4M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| IS41LV16100A-60TI IS41LV16100A-60K IS41LV16100A-50 |
RES 0805 1/8W 5% 2.4K 1M X 16 EDO DRAM, 60 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| HYM72V1625GS-60 HYM72V1625GS-50 HM72V166 HYM72V162 |
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 50 ns, DMA168
16M x 72-Bit EDO-DRAM Module 16M X 72 EDO DRAM MODULE, 60 ns, DMA168
16M x 72-Bit EDO-DRAM Module (ECC - Module)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| AS4C4M4E1Q AS4CM4E1Q-50 AS4CM4E1Q-60 AS4CM4EOQ AS4 |
Thick Film Chip Resistor - RMC 1 3.9 5% R 4米4的CMOS QuadCAS的DRAM（江户）家庭
4M X 4 CMOS Quad CAS DRAM (EDO) family
4M x 4 CMOS QuadCAS DRAM (EDO) family
|
Analog Devices, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40
4M X 4 OTHER DRAM, 70 ns, PDSO26
16M X 1 EDO DRAM, 60 ns, PDSO24
4M X 4 OTHER DRAM, 50 ns, PDSO26
16K X 4 CACHE SRAM, 10 ns, PDIP24
|
SIEMENS AG
|
