| PART |
Description |
Maker |
| TLP250 |
TRANSISTOR INVERTER FOR AIR CONDITIONOR IGBT GATE DRIVE POWER MOS FET GATE DRIVE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| TLP705 |
Plasma Display Panel. Industrial Inverter IGBT/Power MOS FET Gate Drive
|
Toshiba Semiconductor
|
| TLP701 |
INDUSTRIAL INVERTERS INVERTER FOR AIR CONDITIONERS IGBT/POWER MOS FET GATE DRIVE
|
Toshiba Semiconductor
|
| APT40GP90J |
MOSFET
POWER MOS 7 IGBT
68 A, 900 V, N-CHANNEL IGBT ISOTOP-4
|
ADPOW[Advanced Power Technology]
Advanced Power Electronics, Corp.
|
| 8810A |
N-channel power MOS field effect tube
|
SHENZHEN FUMAN ELECTRON...
|
| APT5020BLC APT5020SLC |
POWER MOS VI 500V 26A 0.200 Ohm
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
| APT35GP120B2DF2 |
Power MOS 7 IGBT
|
Advanced Power Technology
|
| APT25GP90BDQ1G APT25GP90BDQ1 |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
| APT32GU30K |
POWER MOS 7 IGBT
|
Advanced Power Technology
|
