PART |
Description |
Maker |
W25X32VSSIZ W25X32VZEIZ W25X16VDAIG |
4 Mbit Uniform Sector, Serial Flash Memory 32M X 1 FLASH 2.7V PROM, PDSO8 4 Mbit Uniform Sector, Serial Flash Memory 16M X 1 FLASH 2.7V PROM, PDIP8
|
Winbond Electronics, Corp.
|
K8F5715ETM-SC1C0 K8F5715ETM-DE1F0 K8F5715ETM-FC1E0 |
16M X 16 FLASH 1.8V PROM, 100 ns, PBGA44 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA88
|
|
AM29LV652DU101RMAI AM29LV652DU120RMAI AM29LV652DU1 |
16M X 8 FLASH 3V PROM, 100 ns, PBGA63 16M X 8 FLASH 3V PROM, 120 ns, PBGA63
|
SPANSION LLC
|
69F1608RPFH 69F1608RPFK |
128 Megabit (16M x 8-Bit) Flash Memory Module 16M X 8 FLASH 5V PROM MODULE, 35 ns, DFP24
|
Maxwell Technologies, Inc
|
S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 4M X 16 FLASH 3V PROM, 90 ns, PBGA48
|
Spansion, Inc. SPANSION LLC
|
PC28F256J3D-95 PC28F640J3D75A PC28F128J3D75B PC28F |
16M X 16 FLASH 2.7V PROM, 95 ns, PBGA64 LEAD FREE, ESBGA-64 4M X 16 FLASH 2.7V PROM, 75 ns, PBGA64 8M X 16 FLASH 2.7V PROM, 75 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
PC28F256P30TFA RC28F256P30TFA |
32M X 16 FLASH 1.8V PROM, PBGA64 LEAD FREE, BGA-64 16M X 16 FLASH 1.8V PROM, 100 ns, PBGA64
|
Numonyx Asia Pacific Pte, Ltd.
|
AM29LV160BT-90WCC AM29LV160BT-90EE AM29LV160BT-90S |
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 16 FLASH 3V PROM, 90 ns, PBGA48 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 1M X 16 FLASH 3V PROM, 90 ns, PDSO44 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
|
Advanced Micro Devices, Inc. ADVANCED MICRO DEVICES INC
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
K9F2808U0C-VIB0 K9F2808Q0C-DCB0 K9F2808U0C-DCB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory 1,600 × 8位,8米16位NAND闪存 16M X 8 FLASH 2.7V PROM, 30 ns, PBGA63
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MBM29DL164TD-70PFTN MBM29DL162TD-90PBT MBM29DL164T |
1M X 16 FLASH 3V PROM, 90 ns, PDSO48 FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation
|
FUJITSU LTD http://
|
MBM29DL163TD-90PBT MBM29DL161BD-70PFTN MBM29DL161B |
FLASH MEMORY CMOS 16M (2M X 8/1M X 16) BIT Dual Operation 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|