| PART |
Description |
Maker |
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| CY7C1351F CY7C1351F-100AC CY7C1351F-100AI CY7C1351 |
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 11 ns, PBGA119
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PQFP100
4-Mb (128K x 36) Flow-through SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 8 ns, PBGA119
4-Mb (128K x 36) Flow-through SRAM with NoB TM Architecture
4-Mb (128K x 36) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| CY7C1350G-250BGXC CY7C1350G-166BGXI CY7C1350G-166B |
4-Mbit (128K x 36) Pipelined SRAM with NoBLArchitecture 128K X 36 ZBT SRAM, 4 ns, PBGA119
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1372CV25-167AI CY7C1372CV25-167BGI CY7C1372CV2 |
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 3 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA119
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 1M X 18 ZBT SRAM, 2.8 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PQFP100
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 512K X 36 ZBT SRAM, 3.4 ns, PBGA165
512K x 36/1M x 18 Pipelined SRAM with NoBLArchitecture 12k × 36/1M × 18流水线的SRAM架构的总线延迟
CAP,Ceramic,10000pF,500VDC,10-% Tol,10% Tol,X7R-TC Code,-15,15%-TC,30ppm-TC RoHS Compliant: Yes
512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AS7C33128NTD32_36B AS7C33128NTD36B-200TQIN AS7C331 |
3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 32 ZBT SRAM, 3.5 ns, PQFP100
3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 36 ZBT SRAM, 3.5 ns, PQFP100
3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 32 ZBT SRAM, 3 ns, PQFP100
3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 36 ZBT SRAM, 4 ns, PQFP100
3.3V 128Kx32/36 Pipelined SRAM with NTD 128K X 32 ZBT SRAM, 4 ns, PQFP100
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| MT55L64L32P1 MT55L128L18P |
64K x 32,3.3V I/O, ZBT SRAM( 2Mb,3.3V输入/输出，静态RAM)
128K x 18, 3.3V I/O, ZBT SRAM(2Mb,3.3V输入/输出，静态RAM) 128K的18.3V的I / O的ZBT SRAM的（处理器，3.3V的输输出，静态内存）
|
Micron Technology, Inc.
|
| GVT71128ZC36T-6 |
128K X 36 ZBT SRAM, 4.5 ns, PQFP100
|
CYPRESS SEMICONDUCTOR CORP
|
| K7N321831C K7N323631C-QI160 K7N323631C-EC160 K7N32 |
1Mx36 & 2Mx18 Pipelined NtRAM
1M X 36 ZBT SRAM, 3.5 ns, PQFP100
1M X 36 ZBT SRAM, 3.5 ns, PBGA165
1M X 36 ZBT SRAM, 2.6 ns, PQFP100
|
Samsung semiconductor
|
| AS7C33128NTF18B AS7C33128NTF18B-80TQIN AS7C33128NT |
LM3914 Dot/Bar Display Driver; Package: PLCC; No of Pins: 20; Qty per Container: 40; Container: Rail
LM3914 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
128K X 18 ZBT SRAM, 7.5 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
3.3V 128K x 18 Flowthrough Synchronous SRAM with NTD 128K X 18 ZBT SRAM, 7.5 ns, PQFP100
128K X 18 ZBT SRAM, 7.5 ns, PQFP100 14 X 20 MM, TQFP-100
LM3881 Power Sequencer; Package: MINI SOIC; No of Pins: 8; Qty per Container: 1000; Container: Reel
LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute; Package: TO-220; No of Pins: 11; Qty per Container: 20; Container: Rail
LM3881 Power Sequencer; Package: MINI SOIC; No of Pins: 8; Qty per Container: 3500; Container: Reel
LM3886 Overture Audio Power Amplifier Series High-Performance 68W Audio Power Amplifier w/Mute; Package: ISOLATED TO220; No of Pins: 11; Qty per Container: 20; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
Integrated Silicon Solution, Inc.
ALSC[Alliance Semiconductor Corporation]
|
| IS61NLF102436A IS61NLF102436A-6.5B3 IS61NLF102436A |
STATE BUS SRAM
1M X 36 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
1M X 36 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
2M X 18 ZBT SRAM, 6.5 ns, PBGA165 13 X 15 MM, PLASTIC, BGA-165
2M X 18 ZBT SRAM, 6.5 ns, PQFP100 TQFP-100
|
Integrated Silicon Solution, Inc.
|
| MT55L512Y32F MT55V512Y36F MT55L1MY18F MT55V512V36F |
16Mb: 512K x 32，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36，Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 1 Meg x 18, Flow-Through ZBT SRAM(16Mb流通式同步静态存储器)
16Mb: 512K x 36锛?low-Through ZBT SRAM(16Mb娴??寮??姝ラ?????ㄥ?)
|
Micron Technology, Inc.
|
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