| PART |
Description |
Maker |
| R15KP20 R15KP200A R15KP200C R15KP100 R15KP100A R15 |
TRANSIENT VOLTAGE SUPPRESSORS
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 40V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 51V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| 2SC2099 |
TRANSISTOR (2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS) (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| M67796 |
RF POWER MODULE 1240-1300MHz, 7.2V, 1.4W, FM PORTABLE RADIO
|
Mitsubishi Electric Corporation
|
| 2SC2290 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE)
|
TOSHIBA
|
| AM29LV800BB-120WBI AM29LV800BB-120WBC AM29LV800BB- |
30MHZ, 3.3V, 44 TQFP, IND TEMP(FPGA)
30MHZ, 3.3V, 20 PLCC, COM TEMP(FPGA)
30MHZ, 3.3V, 20 PLCC, IND TEMP(FPGA)
8-TSSOP,AUTO,Pb/HALO FREE,NIPDAU LF 2.5V(SERIAL EE)
10MHZ, 20 SOIC, COM TEMP, 5K MOQ(FPGA)
10MHZ, 20 SOIC, IND TEMP, 5K MOQ(FPGA)
30MHZ, 3.3V, 44 PLCC, COM TEMP(FPGA)
30MHZ, 3.3V, 44 TQFP, COM TEMP(FPGA)
30MHZ, 8 LAP, IND TEMP, GREEN(FPGA) x8/x16闪存EEPROM
x8/x16 Flash EEPROM x8/x16闪存EEPROM
32M CONFIG FLASH, 44 PLCC, GREEN(FPGA) x8/x16闪存EEPROM
512K X 16 FLASH 3V PROM, 120 ns, PDSO44
512K X 16 FLASH 3V PROM, 120 ns, PDSO48
10MHZ, 8 PDIP, COM TEMP, 5K MOQ(FPGA)
|
Analog Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| EL521007 EL5210CS-T13 EL5410CS-T13 EL5210CS-T7 EL5 |
30MHz Rail-to-Rail Input-Output Op Amps(30MHz 满幅输入输出运放)
|
Intersil Corporation
|
| RD06HHF1 RD06HHF108 |
RF POWER MOS FET Silicon MOSFET Power Transistor 30MHz,6W
|
Mitsubishi Electric Semiconductor
|
| RD06HHF1 |
Silicon MOSFET Power Transistor 30MHz,6W
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M68719 68719 |
From old datasheet system
1240-1300MHZ, 12.5V, 16W, FM MOBILE RADIO
|
Mitsubishi Electric Semiconductor
|
| 1N6275 1N6281 1N6274A 1N6292 1N6271A 1N6289 1N6269 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 60.7V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 6.63V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1
Diode TVS Single Bi-Dir 7.37V 1.5KW 2-Pin Case 1.5KE
|
New Jersey Semiconductor
|
| RD00HHS110 |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
|
