PART |
Description |
Maker |
NT5DS16M16BS-6KL |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
NANYA TECHNOLOGY CORP
|
V58C2256164SCE5BI |
16M X 16 DDR DRAM, 0.65 ns, PDSO66
|
PROMOS TECHNOLOGIES INC
|
HY5DU121622BT-D4 HY5DU12822BT HY5DU12822BTP-H HY5D |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 DDR SDRAM - 512Mb 64M X 8 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
MT46V32M16P-5BLF MT46V32M16P-5BFTR MT46V32M16P-5BL |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 512Mb: x4, x8, x16 DDR SDRAM Features 128M X 4 DDR DRAM, 0.7 ns, PBGA60
|
Micron Technology, Inc.
|
MT46V32M16P-5B MT46V32M16P-5BLIT MT46V32M16P-5BIT |
32M X 16 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 64M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 128M X 4 DDR DRAM, 0.75 ns, PDSO66
|
Micron Technology, Inc. BI Technologies, Corp.
|
K4H561638N-LCB3T00 K4H560838N-LLB30 |
N-die DDR SDRAM 32M X 8 DDR DRAM, 0.7 ns, PDSO66
|
Samsung semiconductor
|
HY5DU561622CT-D4 HY5DU56822CT-D4 HY5DU56822CT-D43 |
256M-P DDR SDRAM 32M X 8 DDR DRAM, 0.65 ns, PDSO66
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
EDD5108ADTA-7BTI EDD5116ADTA-7BTI EDD5108ADTA-TI D |
512M bits DDR SDRAM WTR (Wide Temperature Range) 32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
Elpida Memory ELPIDA MEMORY INC
|
K4H1G0438A-UC/LA2 K4H1G0838A-UC/LA2 K4H1G0438AUC/L |
128M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 256M X 4 DDR DRAM, 0.75 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, ROHS COMPLIANT, TSOP2-66 1Gb A-die SDRAM Specification
|
Cypress Semiconductor, Corp. Samsung semiconductor
|
D5116ADTA-5CLI-E |
32M X 16 DDR DRAM, 0.7 ns, PDSO66
|
ELPIDA MEMORY INC
|
HY5DU56422BT-D43 |
64M X 4 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
|