| PART |
Description |
Maker |
| FDMS86252L |
150V N-Channel Shielded Gate PowerTrenchMOSFET
|
Fairchild Semiconductor
|
| FDB86135 |
N-Channel Shielded Gate PowerTrench? MOSFET
|
Fairchild Semiconductor
|
| FDC8601 |
N-Channel Shielded Gate PowerTrench MOSFET
|
Fairchild Semiconductor
|
| SRU6025-100Y SRU6025-150Y SRU6025-151Y SRU6025-220 |
CHOKE, POWER, SHIELDED, 10UH; Inductor type:Shielded Power Choke; Inductance:10uH; Tolerance, inductance:30%; Resistance:57mR; Frequency, resonant:25MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 15UH; Inductor type:Shielded Power Choke; Inductance:15uH; Tolerance, inductance:30%; Resistance:86mR; Frequency, resonant:22MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 150UH; Inductor type:Shielded Power Choke; Inductance:150uH; Tolerance, inductance:30%; Resistance:770mR; Frequency, resonant:5MHz; Case style:SMD Shielded; Q factor:30; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 22UH; Inductor type:Shielded Power Choke; Inductance:22uH; Tolerance, inductance: /-30%; Resistance:130mR; Frequency, resonant:18MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 220UH; Inductor type:Shielded Power Choke; Inductance:220uH; Tolerance, inductance:30%; Resistance:1250mR; Frequency, resonant:4MHz; Case style:SMD Shielded; Q factor:20; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 33UH; Inductor type:Shielded Power Choke; Inductance:33uH; Tolerance, inductance:30%; Resistance:180mR; Frequency, resonant:12MHz; Case style:SMD Shielded; Q factor:12; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 4.7UH; Inductor type:Shielded Power Choke; Inductance:4.7uH; Tolerance, inductance: /-30%; Resistance:35mR; Frequency, resonant:42MHz; Case style:SMD Shielded; Q factor:8; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
CHOKE, POWER, SHIELDED, 68UH; Inductor type:Shielded Power Choke; Inductance:68uH; Tolerance, inductance: /-30%; Resistance:365mR; Frequency, resonant:8MHz; Case style:SMD Shielded; Q factor:10; Material, core:Ferrite DR/RI; RoHS Compliant: Yes
|
BOURNS INC
|
| STS5N150 9639 |
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET?/a> POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFET⑩ POWER MOSFET
N-CHANNEL 150V - 0.045 OHM - 5A SO-8 LOW GATE CHARGE STripFETPOWER MOSFET
N-CHANNEL POWER MOSFET
From old datasheet system
|
STMicroelectronics
意法半导
ST Microelectronics
|
| APT5010LLC APT5010B2LC APT5010B2LC-06 |
47 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS VI 500V 47A 0.100 Ohm
|
Advanced Power Technolo...
Advanced Power Technology Ltd.
|
| STP80NF10FP STP80NF10 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET⑩II POWER MOSFET
N-CHANNEL 100V - 0.012 OHM - 80A TO-220/TO-220FP LOW GATE CHARGE STRIPFET II POWER MOSFET
N-CHANNEL 100V - 0.012ohm - 80A TO-220/TO-220FP LOW GATE CHARGE STripFET?II POWER MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| D1009UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
Seme LAB
|
| D1029UK |
METAL GATE RF SILICON FET 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
|
