| PART |
Description |
Maker |
| FDS3601 FDS3601NL |
100V Dual N-Channel PowerTrench MOSFET 1.3 A, 100 V, 0.53 ohm, N-CHANNEL, Si, POWER, MOSFET
100V Dual N-Channel PowerTrench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFG5110 IRFG5110P IRFG5110N IRFG5110-15 |
Simple Drive Requirements
100V, Combination 2N-2P-CHANNEL
-100V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
100V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| IRF5M5210 IRF5M5210D IRF5M5210UPBF IRF5M5210-15 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-254AA package
34 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-100V, Rds(on)=0.07ohm, Id=-34A)
Avalanche Energy Ratings
|
IRF[International Rectifier]
|
| FDP120N10 |
74 A, 100 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel PowerTrench垄莽 MOSFET 100V, 74A, 12m楼?
N-Channel PowerTrench? MOSFET 100V, 74A, 12mΩ
|
FAIRCHILD SEMICONDUCTOR CORP
|
| AM29DL162DT120WCE AM29DL162DT120WCEN AM29DL163DB12 |
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6792 with Standard Packaging
x8/x16 Flash EEPROM
100V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRLF120 with Standard Packaging
500V Single N-Channel Hi-Rel MOSFET in a TO-204AE package; A IRF460 with Standard Packaging
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A IRFF310 with Standard Packaging
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY140CM with Standard Packaging
60V Single N-Channel Hi-Rel MOSFET in a D3 package; A IRFMJ044 with Standard Packaging
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRFY9140CM with Standard Packaging x8/x16闪存EEPROM
55V Single N-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5YZ48CM with Standard Packaging x8/x16闪存EEPROM
400V Single N-Channel Hi-Rel MOSFET in a TO-205AF package; A JANTXV2N6786 with Standard Packaging EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-257AA package; A IRF5Y9540CM with Standard Packaging x8/x16闪存EEPROM
-100V Single P-Channel Hi-Rel MOSFET in a TO-204AA package; A IRF9130 with Standard Packaging x8/x16闪存EEPROM
100V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package; A JANTX2N6782U with Standard Packaging x8/x16闪存EEPROM
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package; A IRFAG40 with Standard Packaging EEPROM
|
PLX Technology, Inc.
|
| HUFA75631SK8 HUFA75631SK8T |
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFETPower MOSFET
5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | SO
|
Fairchild Semiconductor Corporation
|
| JANS2N6849 JANTXV2N6849 JANTX2N6849 2489 IRFF9130 |
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
HEXFET? TRANSISTORS
From old datasheet system
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.30ohm, Id=-6.5A)
|
IRF[International Rectifier]
|
| IRF5N3710 |
100V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.028ohm, Id=45A)
|
IRF[International Rectifier]
|
| IRFP243R IRFF122R IRFF123R IRF621R IRFP140R IRFF12 |
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 20A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 5A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 31A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 8A条（丁）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 4.9A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 4.9AI（四）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 1A I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 1A条（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 28A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 80V的五（巴西）直| 28A条（丁）|04AE
TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 600MA I(D) | TO-250VAR 晶体管| MOSFET的| N沟道| 150伏五（巴西）直| 600毫安（丁）|50VAR
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 25A I(D) | TO-204AE 晶体管| MOSFET的| N沟道| 100V的五（巴西）直|5A条（丁）|04AE
|
Black Box, Corp.
Bourns, Inc.
Vishay Intertechnology, Inc.
Samsung Semiconductor Co., Ltd.
3M Company
|
| IRF5Y3710CM |
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.035ohm, Id=18A*) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.035ohm，身份证\u003d 18A
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.035ohm Id=18A*)
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRF5Y540CM |
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
THRU-HOLE (TO-257AA) 100V, N-CHANNEL
POWER MOSFET N-CHANNEL(Vdss=100V Rds(on)=0.058ohm Id=18A*)
POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.058ohm, Id=18A*)
|
IRF[International Rectifier]
|
