PART |
Description |
Maker |
CDL13007 |
80.000W Switching NPN Plastic Leaded Transistor. 400V Vceo, 6.000A Ic, 8 - 40 hFE.
|
Continental Device India Limited
|
CD13003 |
45.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 1.500A Ic, 5 - 25 hFE.
|
Continental Device India Limited
|
ASI10652 TVU150 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator UHF BAND, Si, NPN, RF POWER TRANSISTOR NPN Silicon RF Power Transistor(Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V)(NPN 硅型射频功率晶体Ic:25A,Vcbo: 28 V,Vceo: 60 V,Vebo: 3.5 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
ASI10749 VMB80-28S VHB25-12S |
NPN Silicon RF Power Transistor(Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:9.0 A,Vcbo: 65 V,Vceo: 36 V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
2SC4616 |
Large current calcity (IC=2A) High blocking voltage(VCEO 400V)
|
TY Semiconductor Co., Ltd
|
CD9011 CD9011D CD9011E CD9011F CD9011G CD9011H CD9 |
0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 273 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 29 - 44 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 40 - 59 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 54 - 80 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 72 - 108 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 97 - 146 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 132 - 198 hFE 0.400W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.100A Ic, 182 - 273 hFE
|
Continental Device India Limited
|
ASI10685 ULBM45 ASI10653 TVU150A |
NPN Silicon RF Power Transistor(Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V)(NPN 硅型射频功率晶体Ic:10.0 A,Vcbo: 36 V,Vceo: 16 V,Vces: 36V,Vebo: 4.0 V))
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
|
2SC3242 2SC3242A |
900mW Lead frame NPN transistor, maximum rating: 20V Vceo, 2A Ic, 150 to 500 hFE. Complementary 2SA1282A 900mW Lead frame NPN transistor, maximum rating: 16V Vceo, 2A Ic, 150 to 800 hFE. Complementary 2SA1282 FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
CD9013 CD9013F CD9013H CD9013DEF CD9013GHI CD9013J |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 278 - 465 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 118 - 305 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 135 hFE 0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.500A Ic, 64 - 465 hFE NPN SILICON PLANAR TRANSISTOR
|
Continental Device India Limited
|
C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE. 10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
BF495 BF495D BF494 BF494A BF494B BF495C |
0.300W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 0.030A Ic, 35 - 76 hFE NPN SILICON PLANAR EPITAXIAL RF TRANSISTORS
|
CDIL[Continental Device India Limited]
|
2SA1412-Z |
High Voltage: VCEO=-400V High speed:tr 0.7ìs Collector to Base Voltage VCBO -400 V
|
TY Semiconductor Co., Ltd
|
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