| PART |
Description |
Maker |
| FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRF640 IRF640PBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRFR9210 IRFU9210 |
-200V Single P-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FQU12N20L FQD12N20L FQU12N20 FQD12N20LTF FQD12N20L |
200V N-Channel Logic Level QFET
200V LOGIC N-Channel MOSFET 9 A, 200 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| IRFG5210 IRFG5210N IRFG5210P IRFG5210-15 |
Simple Drive Requirements
200V, Combination 2N-2P-CHANNEL HEXFET MOSFET TECHNOLOGY
200V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package
200V Single N-Channel Hi-Rel MOSFET in a MO-036AB package
200V Single P-Channel Hi-Rel MOSFET in a MO-036AB package
|
International Rectifier
|
| FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 6.8AI（四）|20F
200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFP90N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A?)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A?
|
IRF[International Rectifier]
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| IRF640NS IRF640NSPBF IRF640NSTRL IRF640NPBF IRF640 |
200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
200V Single N-Channel HEXFET Power MOSFET in a TO-262 package
|
International Rectifier
|
