PART |
Description |
Maker |
CM200DY-24H |
Dual IGBTMOD 200 Amperes/1200 Volts 200 A, 1200 V, N-CHANNEL IGBT
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Powerex, Inc. Powerex Power Semiconductors
|
NX3008PBKS NX3008PBKS-15 |
30 V, 200 mA dual P-channel Trench MOSFET SMALL SIGNAL, FET
|
NXP Semiconductors N.V.
|
APTM20DUM08TG |
Dual common source MOSFET Power Module 208 A, 200 V, 0.01 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp. Advanced Power Technology
|
APT20M38SVFR APT20M38BVFRG APT20M38BVFR06 APT20M38 |
Power FREDFET; Package: D3 [S]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET Power FREDFET; Package: TO-247 [B]; ID (A): 67; RDS(on) (Ohms): 0.038; BVDSS (V): 200; 67 A, 200 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
JANTX2N6766 |
N Channel MOSFET; Package: TO-204AE; ID (A): 30; PD (W): 150; BVDSS (V): 200; Rq: 0.83; 30 A, 200 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
Microsemi, Corp.
|
SUD19N20-90 |
N-Channel 200-V (D-S) 175 °C MOSFET N-Channel 200-V (D-S) 175C MOSFET
|
Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
IRF9510 FN2214 |
From old datasheet system 3.0A, 100V, 1.200 Ohm, P-Channel Power MOSFET 3.0A/ 100V/ 1.200 Ohm/ P-Channel Power MOSFET 3.0A, 100V, 1.200 Ohm, P-Channel Power
MOSFET(3.0A, 100V, 1.200 Ω,P沟道功率MOS场效应管)
|
Intersil Corporation
|
FDS8958B |
30V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench? MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ Dual N & P-Channel PowerTrench垄莽 MOSFET Q1-N-Channel: 30 V, 6.4 A, 26 m楼? Q2-P-Channel: -30 V, -4.5 A, 51 m楼?
|
Fairchild Semiconductor
|
OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6D package 400V Dual N-Channel MOSFET in a S-6D package 500V Dual N-Channel MOSFET in a S-6E package 1000V Dual N-Channel MOSFET in a S-6E package SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6 400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包 10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier Electronic Theatre Controls, Inc. Atmel, Corp.
|
STN4NF20L |
N-channel 200 V, 1.1 Ohm typ., 1 A STripFET(TM) II Power MOSFET in SOT-223 package N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET II Power MOSFET
|
ST Microelectronics STMicroelectronics
|
APT20M22LVFR APT20M22LVFRG |
Power FREDFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
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