| PART |
Description |
Maker |
| TC55V1001AFT-85 TC55V1001AST-85 TC55V1001AST-85L T |
ER 10C 10#16 PIN RECP 131,072 - Word位CMOS静态RAM
131,072-WORD BY 8-BIT CMOS STATIC RAM 131,072 - Word8位CMOS静态RAM
LJT 32C 32#20 PIN PLUG 131,072 - Word位CMOS静态RAM
131,072-WORD BY 8-BIT CMOS STATIC RAM 131,072 - Word位CMOS静态RAM
|
Toshiba, Corp.
Toshiba Corporation
|
| CXK591000YM-55LL CXK591000TM CXK591000TM-10LL CXK5 |
131/072-word X 9-bit High Speed CMOS Static RAM
131,072-word X 9-bit High Speed CMOS Static RAM 131,072字9位高速CMOS静态RAM
128 x 64 pixel format, LED Backlight available 131,072字9位高速CMOS静态RAM
|
SONY[Sony Corporation]
Sony, Corp.
|
| IRF-36 |
Epoxy Conformal Coated Inductor
|
Vishay
|
| GM76C8128CL-55 GM76C8128CLLI-55 GM76C8128CLL-85 GM |
131,072 words x 8 bit CMOS static RAM, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 55ns
131,072 words x 8 bit CMOS static RAM, low power, 85ns
131,072 words x 8 bit CMOS static RAM, 70ns
|
LG Semiconductor
|
| IS27HC010 IS27HC010-30PL IS27HC010-30PLI IS27HC010 |
131,072 x 8 HIGH-SPEED CMOS EPROM
|
Integrated Silicon Solution, Inc
|
| MSM548128BL-80RS MSM548128BL-80GS-K |
131,072-Word X 8-Bit High-Speed PSRAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| NTD80N02 NTD80N02G NTD80N02T4 NTD80N02T4G NTD80N02 |
SHUNT 80 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET 80 Amps, 24 Volts N-Channel DPAK
|
ONSEMI[ON Semiconductor]
|
| F29C51001 F29C51001B F29C51001T |
1MEGABIT(131,072 x 8 BIT) 5 VOLT CMOS FLASH MEMORY
|
Electronic Theatre Controls, Inc.
|
| TC551001PL-70 TC551001FL-10 TC551001FL-70 |
x8 SRAM
x8SRAM
131,072 Words x 8-Bit Static RAM
|
Toshiba
|
| V29C51001B V29C51001T V29C51001T-45J V29C51001T-45 |
1 MEGABIT 131,072 x 8 BIT 5 VOLT CMOS FLASH MEMORY
|
MOSEL[Mosel Vitelic, Corp]
|
| EH2645TTS-131.250M |
OSCILLATORS 50PPM 0 70 3.3V 4 131.250MHZ TS CMOS 5X7MM 4PAD SMD
|
ECLIPTEK CORP
|
| MSM54V25632A |
131,072-Word x 32-Bit x 2-Bank Synchronous Graphics RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
