PART |
Description |
Maker |
GMR30H150CTPF3T GMR30H150C GMR30H150CTA3R GMR30H15 |
HIGH VOLTAGE POWER SCHOTTKY RECTIFIE
|
GAMMA[Gamma Microelectronics Inc.]
|
SF10A01 SF10A02 SF10A04 SF10A03 SF10A05 SF10A06 |
Glass Passivated Super Fast Recovery Rectifie
|
YENYO TECHNOLOGY Co., Ltd
|
TMP93PW46A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93CS41D TMP93CS40D TMP93CS41 TMP93CS40 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
TMP93CS42A |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
APT64GA90LD30 |
Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-264; BV(CES) (V): 900; VCE(sat) (V): 3.1; IC (A): 64; 117 A, 900 V, N-CHANNEL IGBT, TO-264AA
|
Microsemi, Corp.
|
SDR939/61 SDR936-61 SDR938/61 SDR936/61 |
30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 600 V, SILICON, RECTIFIER DIODE, TO-61 30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 800 V, SILICON, RECTIFIER DIODE, TO-61 30 AMP 600-900 VOLTS 80 nsec ULTRA FAST RECTIFIER 30 A, 900 V, SILICON, RECTIFIER DIODE, TO-61
|
Solid States Devices, Inc. Solid State Devices, Inc.
|
UPC1687GV-E1 UPC1687GV |
900 MHz SILICON RFIC DOWN CONVERTER
|
CEL[California Eastern Labs]
|
APT46GA90JD40 |
High Speed PT IGBT Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation Microsemi, Corp.
|
MRFIC2101 |
900 MHz TX-MIXER/EXCITER SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
OS904-AC-1 OS906-AC-1 OS912-DC-2 OS910-DC-1 OS910- |
OptiSwitch? 900 Series - Service Demarcation OptiSwitch庐 900 Series - Service Demarcation OptiSwitch垄莽 900 Series - Service Demarcation
|
MRV Communications, Inc.
|
UPC8100 UPC8100GR UPC8100GR-E2 |
SILICON UP/DOWN CONVERTERS IC FOR 800 MHz to 900 MHz MOBILE COMMUNICATIONS
|
NEC Corp. NEC[NEC]
|