| PART |
Description |
Maker |
| NX7437AG-AA NX7437BF-AA |
1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
California Eastern Labs
|
| NX6414EH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION
|
California Eastern Labs
Renesas Electronics Corporation
|
| ML7XX12 ML785B12 |
InGaAsP-MQW-FP LASER DIODES ARRATS
InGaAsP - MQW - FP LASER DIODE ARRAYS
|
Mitsubishi Electric Corporation
|
| NX8304CE-CC NX8304BE-CC NX8304BE |
NECs 1310 nm InGaAsP MQW-DFB LASER DIODE
InGaAsP MQW-DFB LASER DIODE IN COAXIAL PACKAGE FOR FIBER OPTIC COMMUNICATIONS
|
CEL[California Eastern Labs]
http://
|
| ML99213 ML9XX13 |
Optoelectronics - Discontinued Products
InGaAsP - MQW - DFB LASER DIODES
In GaAsP-MQW-DFB LASER DIODES
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NX8561JC NX8501CC-BA NX8501BC-BA NX8501AC-BA NX856 |
1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE
InGaAsP STRAINED DC-PBH LASER DIODE MODULE 1 625 nm TELEMETRY APPLICATION
|
NEC[NEC]
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| ML776H10 ML7XX10 |
InGaAsP-MQW HIGH POWER LASER DIODES
|
Mitsubishi Electric Corporation
|
| NX6514EH NX6514EH-AZ |
1 550 nm InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6511GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX5322EH NX5322EK NX5322 |
1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE
|
NEC
|
