PART |
Description |
Maker |
LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
|
MBM2764 MBM2764-20 MBM2764-25 MBM2764-30 MBM2764-X |
UV ERASABLE 65536-BIT READ ONLY MEMORY UV Erasable 65536 Bit ROM
|
Fujitsu Limited Fujitsu Component Limited. Fujitsu Media Devices Limited Fujitsu Microelectronics
|
GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power 1,048,576 words x 16 bit DRAM, 70ns, low power 1,048,576 words x 16 bit DRAM, 60ns, low power x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
M5M51R16AWG-10L D99015 M5M51R16AWG-15L M5M51R16AWG |
From old datasheet system 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
TC531024F-15 TC531024P-12 |
1M BIT (65536 WORD X 16 BIT) CMOS MASK ROM
|
Electronic Theatre Controls, Inc.
|
UPD27C512 |
65536 x 8-Bit CMOS UV EPROM
|
NEC Electronics
|
NM27C64 |
65536-Bit CMOS EPROM
|
Fairchild
|
HD404342RFP HD404344RFP HD404C342RFP HD404C344RFP |
ROM: 2.048 words; RAM: 256; ; 4-bit microcomputer ROM: 4.096 words; RAM: 256; ; 4-bit microcomputer ROM: 1.024 words; RAM: 256; ; 4-bit microcomputer
|
Hitachi Semiconductor
|
HM6709 |
65536-WORD X 4-BIT HIGH SPEED STATIC RAM (WITH OE)
|
Hitachi,Ltd.
|
UPD28C64 |
65536-Bit Electrically Erasable And Programmable Read-Only Memory
|
http:// NEC[NEC] NEC Corp.
|
M5M51016BRT-12VL-I M5M51016BRT-12VLL-I M5M51016BTP |
Octal D-Type Transparent Latches With 3-State Outputs 20-TSSOP -40 to 85 From old datasheet system 1048576-BIT CMOSSTATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|