| PART |
Description |
Maker |
| TLN11007 TLN110F |
INFRARED LED GAAS INFRARED EMITTER
|
Toshiba Semiconductor
|
| TLN115A07 TLN115AF TLN115A |
Infrared LED GaAs Infrared Emitter
|
Toshiba Semiconductor
|
| SRD00212Z SRD00212 Q62702-P3010 Q62702-P784 Q62702 |
GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
Ternary PIN Photodiode in TO-Package with Integrated Optics
From old datasheet system
|
SIEMENS A G
Infineon Technologies AG
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| LD266 LD267 |
GaAs Infrared Emitter Arrays
|
OSRAM GmbH
|
| SFH4110 |
GaAs Infrared Emitter (Mini Sidelooker)
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SFH435 |
GaAs INFRARED EMITTER DOUBLE EMITTING DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SFH4211 |
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
|
OSRAM GmbH
|
| MTE8080P |
5mm Metal Can IR Emitter
Infrared Emitter
|
MARKTECH[Marktech Corporate]
|
| SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 1N6264 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
