| PART |
Description |
Maker |
| CG2H40025 CG2H40025F CG2H40025P |
25 W, 28 V RF Power GaN HEMT
|
Cree, Inc
|
| CGH40045 |
45 W, RF Power GaN HEMT
|
CREE[Cree, Inc]
|
| CGHV27015S-AMP1 CGHV27015S-TR |
15 W, DC - 6.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CGHV40100P-AMP |
100 W, DC - 4.0 GHz, 50 V, GaN HEMT
|
Cree, Inc
|
| CGHV1F006S |
6W, DC - 18 GHz, 40V, GaN HEMT
|
Wolfspeed
|
| TGI8596-50 |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
| CLF1G0035S-50 CLF1G0035-50 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| CLF1G0060S-30 CLF1G0060-30 |
Broadband RF power GaN HEMT
|
NXP Semiconductors
|
| TGA2576-FL |
2.5 to 6 GHz GaN HEMT Power Amplifier
|
TriQuint Semiconductor
|
| GTVA221701FA |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|
| MAGX-001214-500L00-V2 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solu...
|
| TGF2955 |
40 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
