| PART |
Description |
Maker |
| SDA5000 SDA5000HF SDA12500 SDA15000 SDA8000 SDA100 |
STANDARD RECOVERY HIGH VOLTAGE RECTIFIER
0.5 A, 10000 V, SILICON, SIGNAL DIODE
0.5 A, 12500 V, SILICON, SIGNAL DIODE
0.5 A, 22000 V, SILICON, SIGNAL DIODE
0.5 A, 19000 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| 1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581 |
35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5
40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5
5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
0.125 A, SILICON, SIGNAL DIODE
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4
3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4
1 A, 400 V, SILICON, SIGNAL DIODE, DO-4
1 A, 200 V, SILICON, SIGNAL DIODE, DO-4
0.8 A, SILICON, SIGNAL DIODE
35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
|
|
| CPR1-120LEADFREE CPR1-080LEADFREE CPR1-100LEADFREE |
1 A, 1200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 800 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 1000 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 100 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 600 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 400 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
1 A, 200 V, SILICON, SIGNAL DIODE GPR-1A, 2 PIN
|
Central Semiconductor, Corp.
|
| EGP10GT50A EGP10JT50A EGP10KT50R EGP10D EGP10B |
Fast Rectifiers (Glass Passivated)
1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1 A, 600 V, SILICON, SIGNAL DIODE, DO-41
1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
|
FAIRCHILD SEMICONDUCTOR CORP
|
| BYM05-100 BYM05-600 BYM05-400 |
0.5 A, 100 V, SILICON, SIGNAL DIODE
0.5 A, 600 V, SILICON, SIGNAL DIODE
0.5 A, 400 V, SILICON, SIGNAL DIODE
|
Vishay Intertechnology, Inc.
Vishay Beyschlag
|
| RS0115B SPD0801SMS SPD0801SMSS SPD1001SMSS SPD0901 |
SCHOTTKY RECTIFIER
1 AMPS 80-100 VOLTS SCHOTTKY RECTIFER
1 A, 80 V, SILICON, SIGNAL DIODE
1 A, 100 V, SILICON, SIGNAL DIODE
1 A, 90 V, SILICON, SIGNAL DIODE
|
Solid States Devices, Inc
SOLID STATE DEVICES INC
|
| MMBD4448 1P85MMBD4448 |
0.2 A, 75 V, SILICON, SIGNAL DIODE
High Conductance Fast Diode 0.2 A, SILICON, SIGNAL DIODE, TO-236AB
|
FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
|
| 1N4948-E3-PKG4 |
DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-204AP, LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
|
Vishay Semiconductors
|
| 1N4150-1 JANTXV1N4150-1 |
Signal or Computer Diode; Package: DO-35; IO (A): 0.2; Cj (pF): 2.5; Vrwm (V): 50; trr (nsec): 4; VF (V): 0.74; IR (µA): 0.1; 0.2 A, 50 V, SILICON, SIGNAL DIODE, DO-35
SWITCHING DIODE
|
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| 1N3207 1N3064M 1N3069M 1N3206 1N897 MC001 MC002 MC |
PELLET DIODES 0.1 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.005 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.05 A, SILICON, SIGNAL DIODE
PELLET DIODES 0.01 A, SILICON, SIGNAL DIODE
(1N897 - 1N899) PELLET DIODES
Signal or Computer Diode
|
Microsemi, Corp.
Microsemi Corporation
|
|
