PART |
Description |
Maker |
NPT25015 NPT25015-15 |
Gallium Nitride 28V, 23W RF Power Transistor Thermally-enhanced industry standard package
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu... List of Unclassifed Man...
|
NPT35015 |
Gallium Nitride 28V, 18W RF Power Transistor
|
M/A-COM Technology Solution...
|
NPTB00050 NPTB00050-15 |
Gallium Nitride 28V, 50W RF Power Transistor
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
AML811P5011 |
Gallium Nitride (GaN)
|
Microsemi
|
NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
D1023UK D1023 |
METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(60W-28V-175MHz,Single Ended)(镀金多用DMOS射频硅场效应60W-28V-500MHz,单端) 金镀金属多功能硅的DMOS射频场效应管0 28V 175MHz时,单端)(镀金多用的DMOS射频硅场效应管(60 28V的,500MHz的单端式))
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited Microsemi, Corp.
|
WP710A10YD5V |
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
|
Kingbright Corporation
|
STB16NS25T4 |
16 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET N-CHANNEL 250V - 0.23W - 16A D2PAK MESH OVERLAY?MOSFET
|
STMICROELECTRONICS
|
DGS9-03AS DGS10-03A |
Gallium Arsenide Schottky Rectifier 11 A, 300 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-220AC
|
IXYS, Corp. IXYS[IXYS Corporation]
|
DSEP30-06A DGS19-025AS DGSK40-025A DGSK40-025AS DG |
Gallium Arsenide Schottky Rectifier 18 A, 250 V, GALLIUM ARSENIDE, RECTIFIER DIODE, TO-263AB HiPerFRED Epitaxial Diode with soft recovery
|
IXYS, Corp. IXYS[IXYS Corporation]
|
RFP-100200N4X50-2 |
Aluminum Nitride Terminations
|
Anaren Microwave
|
MGRB2025CT MGRB2025CT_D ON1884 |
From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
|