| PART |
Description |
Maker |
| HY57V121620 HY57V121620LT-6 HY57V121620LT-8 HY57V1 |
32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 8M x 16Bit Synchronous DRAM
SDRAM|4X8MX16|CMOS|TSOP|54PIN|PLASTIC 内存| 4X8MX16 |的CMOS |的TSOP | 54PIN |塑料
|
HYNIX SEMICONDUCTOR INC
Electronic Theatre Controls, Inc.
STMicroelectronics N.V.
|
| TC59SM704AFTL-70 TC59SM704AFTL-80 TC59SM716AFTL-70 |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| UPD45256163G5-A80L-9JF UPD45256441G5-A80-9JF UPD45 |
16M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
64M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
|
|
| KM44S32030BT-G_FA KM44S32030BT-G_FH KM44S32030BT-G |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
128Mbit SDRAM 8M x 4Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米4位4银行同步DRAM LVTTL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| UPD45128441G5-A10T-9JF |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
ELPIDA MEMORY INC
|
| TC59SM808CMBL-80 |
32M X 8 SYNCHRONOUS DRAM, 6 ns, PBGA60
|
|
| K4S280432I-TL750 |
32M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
|
| KMM372V3200BS1 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM372V3280BK3 |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| KMM374F3280BK |
32M x 72 DRAM DIMM(32M x 72 动RAM模块) 32M × 72配置的DRAM内存2M × 72配置动态内存模块）
|
Samsung Semiconductor Co., Ltd.
|
| V54C3128164VCLK75HPC V54C3128804VCLK75EPC V54C3128 |
8M X 16 SYNCHRONOUS DRAM, PBGA54
16M X 8 SYNCHRONOUS DRAM, PBGA54
32M X 4 SYNCHRONOUS DRAM, PBGA54
|
PROMOS TECHNOLOGIES INC
|
| AS4C32M16D1A AS4C32M16D1A-5TCN AS4C32M16D1A-5TIN A |
32M x 16 bit DDR Synchronous DRAM
Internal pipeline architecture
|
Alliance Semiconductor ...
|
